Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability

2013 ◽  
Vol 816-817 ◽  
pp. 80-83
Author(s):  
R.X. Hua ◽  
D.Y. Jin ◽  
W.R. Zhang ◽  
D. Lu ◽  
Q. Fu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Temperature Distribution ◽  
Simultaneous Optimization ◽  
Doping Profile ◽  
Current Gain ◽  
Thermal Coupling ◽  
Base Region ◽  
Sige Hbt ◽  
Ge Doping ◽  
Thermal Stability Of

Considering the effect of electro-thermal feedback on the thermal stability of multi-finger power SiGe HBT, optimization of SiGe HBT on both Ge doping profile (electrical aspect) and layout (thermal aspect) is demonstrated in this paper. A novel stepped Ge doping profile of SiGe HBT with a grading Ge concentration in base region is proposed to improve the temperature coefficient of current gain, meanwhile, the cut-off frequency of HBT is also increased considerably due to the accelerated electric field caused by the Ge concentration grading. However, there is still an uneven temperature distribution. Therefore, the layout of multi-finger HBT with nun-uniform emitter finger length is optimized to compensate the thermal coupling effects and hence the uneven temperature distribution is improved obviously. It is shown that the device with simultaneous optimization of Ge doping profile and layout could be in thermal stability over a wide temperature range, which presents useful guideline to design microwave power HBTs.

A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

2016 ◽  
Vol 25 (12) ◽  
pp. 124401 ◽  
Author(s):  
Qiang Fu ◽  
Wan-Rong Zhang ◽  
Dong-Yue Jin ◽  
Yan-Xiao Zhao ◽  
Xiao Wang
Keyword(s):  
Thermal Stability ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Sige Hbt ◽  
Thermal Stability Of

scholarly journals Case Study about the Energy Absorption Capacity of Metal Oxide Varistors with Thermal Coupling

Energies ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 536 ◽  
Author(s):  
Flaviu Frigura-Iliasa ◽  
Sorin Musuroi ◽  
Ciprian Sorandaru ◽  
Doru Vatau
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Thermal Activation ◽  
Absorption Capacity ◽  
Technical Solution ◽  
Thermal Coupling ◽  
Thermal Exchange ◽  
Surge Arresters ◽  
Thermal Stability Of

Metal oxide varistors are applied today inside modern surge arresters for overvoltage protection for all voltage levels. Their main issue is the thermal activation of their crossing current, which could lead to complete destruction by thermal runaway. This article presents a new technological solution developed in order to increase the thermal stability of metal oxide varistors. It consists in connecting in parallel two or more similar varistors (for dividing their current), having a thermal coupling between them (for equalizing their temperatures and forcing them to act together and simultaneously as much as possible). Starting from a finite element computer model performed for each situation (varistor standalone or parallel), up to real measurements, the thermal stability of the equipment was analyzed in permanent and impulse regime. Experiments were carried out in the same conditions. Experimental data obtain from two disk varistors corresponds very well to simulations, proving that parallel connection of varistors, combined with a thermal exchange between them is an efficient technical solution for thermal stability improvement, even if not apparently economically justified.

Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
L. A. D'Asaro ◽  
W. S. Hobson ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Deep Level ◽  
Dose Range ◽  
Hydrogen Ion ◽  
Current Gain ◽  
High Resistivity ◽  
Device Structures ◽  
Hydrogen Ion Implantation ◽  
Relative Thermal Stability ◽  
Thermal Stability Of

ABSTRACTThe formation of high resistivity (> 107 Ω□) regions in GaAs-AlGaAs HBT and SEED structures by oxygen and hydrogen ion implantation is described. Multiple energy implants in the dose range 1013 cm−3 (for O+) and 1015 cm−2 (for H+), followed by annealing around 500°C are necessary to isolate structures ∼2 μm thick. In each case, the evolution of the sheet resistance of the implanted material with annealing is consistent with a reduction in hopping probabilities of trapped carriers between deep level states for temperatures up to ∼600°C, followed by significant annealing of these deep levels. A comparison of the relative thermal stability of O+ or H+ ion implantisolated p+ material is given. Small geometry (2 × 9 μm2) HBTs exhibiting current gain of 44 and cut-off frequency fT as high as 45 GHz are demonstrated using implant isolation.

Design and Thermal Analysis of SiGe HBT with Segmented Emitter Fingers and Non-Uniform Emitter Finger Spacing

2013 ◽  
Vol 462-463 ◽  
pp. 592-596
Author(s):  
Liang Chen ◽  
Cheng Zhong Hu ◽  
Chun Ling Jiang
Keyword(s):  
Thermal Stability ◽  
Thermal Analysis ◽  
Temperature Distribution ◽  
Thermal Resistance ◽  
Three Dimensional ◽  
Heterojunction Bipolar Transistor ◽  
Junction Temperature ◽  
Ansys Software ◽  
Sige Hbt ◽  
Novel Structure

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 429.025K to 414.252K, the thermal resistance reduce from 159K/W to 141K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.

Design and Thermal Analysis of SiGe HBT with Non-Uniform Segmented Emitter Fingers and Non-Uniform Emitter Finger Spacing

2015 ◽  
Vol 713-715 ◽  
pp. 938-941
Author(s):  
Liang Chen
Keyword(s):  
Thermal Stability ◽  
Thermal Analysis ◽  
Temperature Distribution ◽  
Thermal Resistance ◽  
Three Dimensional ◽  
Heterojunction Bipolar Transistor ◽  
Junction Temperature ◽  
Ansys Software ◽  
Sige Hbt ◽  
Novel Structure

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with non-uniform segmented emitter fingers structure and non-uniform emitter finger spacing structure, the maximum junction temperature of novel structure reduce significantly, the thermal resistance reduce, temperature distribution were significantly improved. Thermal stability was effective enhanced.

Novel Emitter-Segmented Power HBT with 2-D Non-Uniform Segment Spacing for High Thermal Stability

2013 ◽  
Vol 313-314 ◽  
pp. 737-741
Author(s):  
D.Y. Jin ◽  
R.X. Hu ◽  
W.R. Zhang ◽  
D. Lu ◽  
Q. Fu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Effects ◽  
Thermal Model ◽  
Power Level ◽  
High Thermal Stability ◽  
Thermal Coupling ◽  
Resistance Matrix ◽  
Coupling Resistance ◽  
Lower Temperature ◽  
Thermal Stability Of

With the aid of the thermal model, thermal resistance matrix of emitter-segmented power HBT is proposed to represent thermal effects. The effect of 2-dimensional (2-D) inter-segment spacing on thermal stability of device is studied. It is shown that the increase of inter-segment spacing could effectively decrease thermal coupling resistance, lower temperature of center segments, and hence improves the thermal stability. Furthermore, a novel emitter-segmented power HBT with 2-D non-uniform segment spacing is proposed, in which the non-uniformity of segment temperature is improved by 75.26% and the maximum power level difference of emitter segment is improved by 55.84%, when compared with uniform segment spacing HBT. Therefore the technique of 2-D non-uniform segment spacing is a better method for enhancing the thermal stability of power HBTs.

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