Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/25/3/037306 ◽

2016 ◽

Vol 25 (3) ◽

pp. 037306

Author(s):

Qing-Wen Song ◽

Xiao-Yan Tang ◽

Yan-Jing He ◽

Guan-Nan Tang ◽

Yue-Hu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4712564 ◽

2012 ◽

Vol 100 (19) ◽

pp. 192101 ◽

Author(s):

D. R. Gajula ◽

D. W. McNeill ◽

B. E. Coss ◽

H. Dong ◽

S. Jandhyala ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Fabrication and characterization of compact 100nm scale metal oxide semiconductor field effect transistors

Microelectronic Engineering ◽

10.1016/0167-9317(93)90102-b ◽

1993 ◽

Vol 21 (1-4) ◽

pp. 409-417

Author(s):

C.M. Reeves ◽

S.J. Wind ◽

F.J. Hohn ◽

J.J. Bucchignano ◽

Y.T. Lii ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939260 ◽

2002 ◽

Author(s):

Jing-Chi Yu ◽

B.C. Lai ◽

J.Y. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectric

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242773 ◽

2005 ◽

Author(s):

Yu-Rung Liu ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

IEEE Electron Device Letters ◽

10.1109/55.877203 ◽

2000 ◽

Vol 21 (11) ◽

pp. 537-539 ◽

Author(s):

Jing-Chi Yu ◽

B.C. Lai ◽

J.Y.-M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.1891289 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123512 ◽

Author(s):

Meishoku Masahara ◽

Yongxun Liu ◽

Kenichi Ishii ◽

Kunihiro Sakamoto ◽

Takashi Matsukawa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Fabrication And Characterization

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3130016 ◽

2021 ◽

pp. 1-7

Author(s):

Zhihao Chen ◽

Xinxin Yu ◽

Jianjun Zhou ◽

Shuman Mao ◽

Yuechan Kong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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