Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Erika Duda; Shifeng Lu; Chun-Li Liu; Zhixiong Jiang; Joe Lerma; Alex Barr; Aaron Thean; Marius Orlowski; Ted White; Bich-Yen Nguyen

doi:10.1116/1.1640659

Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Secondary Ion

Quantitative secondary ion mass spectrometry dopant profiling in silicided metal–oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577633 ◽

1991 ◽

Vol 9 (3) ◽

pp. 1390-1394 ◽

Cited By ~ 1

Author(s):

Howard E. Smith ◽

John L. Beagle

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dopant Profiling ◽

Ion Mass Spectrometry ◽

Secondary Ion

Characterization of advanced complementary metal–oxide–semiconductor processes with reverse secondary ion mass spectrometry profiling

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1596214 ◽

2003 ◽

Vol 21 (4) ◽

pp. 1487 ◽

Cited By ~ 6

Author(s):

Z. X. Jiang ◽

J. Lerma ◽

J. J. Lee ◽

D. Sieloff ◽

S. Chen ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Secondary Ion Mass Spectrometry ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ion Mass Spectrometry ◽

Secondary Ion

Two-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1627793 ◽

2004 ◽

Vol 22 (1) ◽

pp. 373 ◽

Cited By ~ 9

Author(s):

Xiang-Dong Wang ◽

Chun-li Liu ◽

Aaron Thean ◽

Erika Duda ◽

Ran Liu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Two Dimensional ◽

Ultrashallow Junction

Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Cited By ~ 4

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3130016 ◽

2021 ◽

pp. 1-7

Author(s):

Zhihao Chen ◽

Xinxin Yu ◽

Jianjun Zhou ◽

Shuman Mao ◽

Yuechan Kong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied Physics Letters ◽

10.1063/1.3148830 ◽

2009 ◽

Vol 94 (22) ◽

pp. 223512 ◽

Cited By ~ 59

Author(s):

P. Kordoš ◽

R. Stoklas ◽

D. Gregušová ◽

J. Novák

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent

Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4712564 ◽

2012 ◽

Vol 100 (19) ◽

pp. 192101 ◽

Cited By ~ 9

Author(s):

D. R. Gajula ◽

D. W. McNeill ◽

B. E. Coss ◽

H. Dong ◽

S. Jandhyala ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

Profiling of ultra-shallow complementary metal–oxide semiconductor junctions using spreading resistance: A comparison to secondary ion mass spectrometry

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586387 ◽

1992 ◽

Vol 10 (1) ◽

pp. 533 ◽

Cited By ~ 6

Author(s):

C. M. Osburn

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Secondary Ion Mass Spectrometry ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Spreading Resistance ◽

Ion Mass Spectrometry ◽

Secondary Ion