High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

2017 ◽  
Vol 26 (1) ◽  
pp. 017803 ◽  
Author(s):  
Feng Xu ◽  
Peng Chen ◽  
Fu-Long Jiang ◽  
Ya-Yun Liu ◽  
Zi-Li Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lattice Matched

High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3

2018 ◽  
Vol 11 (9) ◽  
pp. 091003 ◽  
Author(s):  
Valentin N. Jmerik ◽  
Dmitrii V. Nechaev ◽  
Alexey A. Toropov ◽  
Evgenii A. Evropeitsev ◽  
Vladimir I. Kozlovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001)

2021 ◽  
Vol 36 (4) ◽  
pp. 045014
Author(s):  
C Himwas ◽  
S Kijamnajsuk ◽  
V Yordsri ◽  
C Thanachayanont ◽  
T Wongpinij ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lattice Matched

Structural, optical and electronic subband studies of lattice-matched In0.72Ga0.28As0.61P0.39/InP multiple quantum wells

1999 ◽  
Vol 141 (1-2) ◽  
pp. 83-88
Author(s):  
T.W. Kang ◽  
Y.H. Wui ◽  
M. Jung ◽  
T.W. Kim ◽  
S.J. Moon ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lattice Matched

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

CrystEngComm ◽  
2020 ◽  
Author(s):  
Yuanhao Sun ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Quantum Wells ◽  
High Efficiency ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si...

scholarly journals Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates

2000 ◽  
Vol 77 (7) ◽  
pp. 975 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
Nguen T. Tuan ◽  
H. D. Sun ◽  
Y. Segawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lattice Matched ◽  
Room Temperature Luminescence

scholarly journals Multicolor Emission from Ultraviolet GaN-based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1-xN/GaN Multiple Quantum Wells

2021 ◽  
Author(s):  
Cheng-Chang Chen ◽  
Hsiang-Ting Lin ◽  
Shih-Pang Chang ◽  
Hao-Chung Kuo ◽  
Hsiao-Wen Hung ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nanoimprint Lithography ◽  
Optical Pumping ◽  
High Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Large Area ◽  
Resonant Modes ◽  
Color Emission ◽  
Photonic Quasicrystal

Abstract In this study, we demonstrated large-area high quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1−xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strongly coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method (FEM) was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.

Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

2001 ◽  
Vol 692 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
B. D. Weaver ◽  
M. Missous
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions ◽  
Intersubband Transitions ◽  
Quantum Well Structures ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Lattice Matched

AbstractIntersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

Sign in / Sign up

Export Citation Format

Share Document