Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film

2021 ◽  
Author(s):  
Jian Zhang ◽  
Hao-chun Zhang ◽  
Zi-liang Huang ◽  
Wen-bo Sun ◽  
Yi-yi Li
2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.


1996 ◽  
Vol 143 (5) ◽  
pp. 1654-1661 ◽  
Author(s):  
M. Ganz ◽  
N. Dorval ◽  
M. Lefebvre ◽  
M. Péalat ◽  
F. Loumagne ◽  
...  

2011 ◽  
Vol 37 (3) ◽  
pp. 1063-1072 ◽  
Author(s):  
He Huang ◽  
John T. Fox ◽  
Fred S. Cannon ◽  
Sridhar Komarneni

RSC Advances ◽  
2016 ◽  
Vol 6 (87) ◽  
pp. 84200-84208 ◽  
Author(s):  
Adil Sultan ◽  
Sharique Ahmad ◽  
Faiz Mohammad

We report the synthesis of polypyrrole (PPy) and polypyrrole/silicon carbide nanocomposites (PPy/SiC) and PPy/SiC/dodecylbenzenesulfonic acid (DBSA) by in situ chemical polymerization and their application as sensors for the detection of highly toxic chlorine gas.


2018 ◽  
Vol 44 (12) ◽  
pp. 13944-13950 ◽  
Author(s):  
Zhenglong Liu ◽  
Chengji Deng ◽  
Chao Yu ◽  
Xing Wang ◽  
Jun Ding ◽  
...  

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