Self-Screening of the polarized electric field in Wurtzite Gallium Nitride along [0001] direction
Abstract The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs) and GaN Polarization SuperJunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. So that, we also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.
Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
