Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

2014 ◽  
Vol 778-780 ◽  
pp. 1180-1184
Author(s):  
Sebastian Roensch ◽  
Victor Sizov ◽  
Takuma Yagi ◽  
Saad Murad ◽  
Lars Groh ◽  
...  
Keyword(s):  
Quantum Correction ◽  
Weak Localization ◽  
High Electron Mobility Transistors ◽  
Electron Interaction ◽  
High Electron ◽  
Temperature Dependent ◽  
Electron Mobility Transistors ◽  
Shubnikov De Haas Oscillations ◽  
Dimensional Electron Gas

We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations. The results verify the high material quality of the investigated GaN on silicon.

scholarly journals High Electron Mobility Transistors Using AlGaN Materials

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

scholarly journals AlGaN Based High Electron Mobility Transistors

2019 ◽  
Author(s):  
Yu Yun ◽  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

Self-Screening of the polarized electric field in Wurtzite Gallium Nitride along [0001] direction

2021 ◽  
Author(s):  
Qiu-Ling Qiu ◽  
Shi-Xu Yang ◽  
Qian-Shu Wu ◽  
Cheng-Lang Li ◽  
Qi Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Computer Aided Design ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Screening Effect ◽  
White Leds ◽  
Design And Optimization ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

Abstract The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs) and GaN Polarization SuperJunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. So that, we also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.

AlGaN/GaN HEMTs with 2DHG Back Gate Control

MRS Advances ◽  
2017 ◽  
Vol 3 (3) ◽  
pp. 137-141 ◽  
Author(s):  
Wei-Tse Lin ◽  
Wen-Chia Liao ◽  
Yi-Nan Zhong ◽  
Yue-ming Hsin
Keyword(s):  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Back Gate ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Gate Control ◽  
Dimensional Electron Gas

ABSTRACTIn this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

HIGH MAGNETIC FIELD IN THz PLASMA WAVE DETECTION BY HIGH ELECTRON MOBILITY TRANSISTORS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 3029-3034 ◽  
Author(s):  
M. SAKOWICZ ◽  
J. ŁUSAKOWSKI ◽  
K. KARPIERZ ◽  
M. GRYNBERG ◽  
G. VALUSIS
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Plasma ◽  
High Electron ◽  
Resonance Transition ◽  
Transistor Channel ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Shubnikov De Haas Oscillations

The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs / AlGaAs and GaN / AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative d S/ d UGS. Shubnikov - de-Haas oscillations (SdHO) of both S and d S/ d UGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and d S/ d UGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs / GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

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