A low-voltage sense amplifier for high-performance embedded flash memory

2010 ◽  
Vol 31 (10) ◽  
pp. 105001 ◽  
Author(s):  
Liu Jiang ◽  
Wang Xueqiang ◽  
Wang Qin ◽  
Wu Dong ◽  
Zhang Zhigang ◽  
...  
2005 ◽  
Vol 40 (2) ◽  
pp. 507-514 ◽  
Author(s):  
A. Conte ◽  
G.L. Giudice ◽  
G. Palumbo ◽  
A. Signorello

2018 ◽  
Vol 14 (1) ◽  
pp. 157-169 ◽  
Author(s):  
W. Steve Ngueya ◽  
Jean-Michel Portal ◽  
Hassen Aziza ◽  
Julien Mellier ◽  
Stephane Ricard

2014 ◽  
Vol 986-987 ◽  
pp. 1734-1737
Author(s):  
Hua Zhang

A sense amplifier applied for low voltage embedded flash memories is presented. The sense amplifier uses an enhanced current sensing method allowing power supplies lower than 1.5 V to be used. The sense amplifier was implemented in a FLASH realized with a 0.13 um FLASH technology. Simulation results showed a read access time of about 25 ns with a power supply of 1.5 V, and 32ns with a power supply of 1.2V.


2020 ◽  
Vol 67 (8) ◽  
pp. 1454-1458
Author(s):  
Wenyi Zhu ◽  
Jianwei Jiang ◽  
Haineng Zhang ◽  
Yiran Xu ◽  
Jun Xiao ◽  
...  

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