Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application

2015 ◽  
Vol 36 (12) ◽  
pp. 125002
Author(s):  
Junming Lin ◽  
Guohao Zhang ◽  
Yaohua Zheng ◽  
Sizhen Li ◽  
Zhihao Zhang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Order ◽  
Harmonic Suppression ◽  
High Order Harmonic ◽  
Class F

400–450 MHz power amplifier with high‐order harmonic suppression for multi‐protocol transceiver

2016 ◽  
Vol 52 (23) ◽  
pp. 1927-1929 ◽  
Author(s):  
Zhaoyang Weng ◽  
Hanjun Jiang ◽  
Jingjing Dong ◽  
Fule Li ◽  
Zhihua Wang
Keyword(s):  
Power Amplifier ◽  
High Order ◽  
Harmonic Suppression ◽  
High Order Harmonic

A planner Doherty power amplifier with harmonic suppression with open and short ended stubs

Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Saeedeh Lotfi ◽  
Saeed Roshani ◽  
Sobhan Roshani ◽  
Maryam Shirzadian Gilan
Keyword(s):  
Power Amplifier ◽  
Power Divider ◽  
Harmonic Suppression ◽  
Power Added Efficiency ◽  
Main Amplifier ◽  
Inverse Topology ◽  
Doherty Power Amplifier ◽  
Amplifier Design ◽  
Doherty Amplifier ◽  
Class F

Abstract This paper presents a new Doherty power amplifier (DPA) with harmonics suppression. A Wilkinson power divider (WPD) with open-ended and short-ended stubs is designed to suppress unwanted signals. To design the power divider in the circuit of the DPA, even and odd mode analyses are utilized. The proposed design operates at range of 1.2–1.6 GHz. The linearity of the suggested DPA is increased about 6 dBm, in comparison with the main amplifier. The designed Doherty amplifier has a power added efficiency (PAE), drain efficiency (DE) and Gain about 60, 61% and 19 dB, respectively. The designed WPD suppresses 2nd up to 14th harmonics with more than 20 dB suppression level, which is useful for suppressing unwanted harmonics in DPA design. ATF-34143 transistors (pHEMT technology) are used for this DPA amplifier design. The main amplifier has class-F topology and class-F inverse topology is used for auxiliary amplifier.

scholarly journals Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Zhiqun Cheng ◽  
Xuefei Xuan ◽  
Huajie Ke ◽  
Guohua Liu ◽  
Zhihua Dong ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Impedance Matching ◽  
Harmonic Suppression ◽  
Compensation Circuit ◽  
Third Harmonic ◽  
The Third ◽  
Saturated Output Power ◽  
Class F

The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

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