Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings

2016 ◽  
Vol 37 (1) ◽  
pp. 014009
Author(s):  
Yunchang Xiao ◽  
Changyong Zhu ◽  
Rixing Wang
Keyword(s):  
Magnetic Field ◽  
Spin Orbit ◽  
Arbitrary Magnetic Field

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

Superconductors with spin–orbit interactions

2016 ◽  
Vol 30 (25) ◽  
pp. 1650183 ◽  
Author(s):  
Yu. N. Ovchinnikov
Keyword(s):  
Magnetic Field ◽  
Superconducting Films ◽  
Critical Magnetic Field ◽  
Spin Orbit ◽  
Zero Temperature ◽  
Interband Pairing ◽  
Two Parameters ◽  
Spin Orbit Interactions ◽  
Parameter Values ◽  
Thin Superconducting Films

The effect of spin-orbit (SO) interaction on the formation of the critical states in thin superconducting films in magnetic field oriented along the film is investigated. Hereby, the case of interband pairing is considered. It was found that eight branches exist in the plane of two parameters [Formula: see text] determined by the value of magnetic field and SO interaction. Six modes leads to inhomogeneous states with different values of the impulse [Formula: see text]. Each state is doubly degenerate over direction of impulse [Formula: see text]. The parameter values at critical point are found for all eight branches in explicit form for zero temperature. The optimal two branches are estimated, corresponding to largest critical magnetic field value for given SO interaction.

SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Binding Energy ◽  
Ground State ◽  
Spin Splitting ◽  
Perpendicular Magnetic Field ◽  
Spin Orbit ◽  
Ground State Binding Energy ◽  
Bound Polaron ◽  
Rashba Spin

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.

scholarly journals A NEW UNIVERSALITY CLASS DESCRIBING THE INSULATING REGIME OF DISORDERED WIRES WITH STRONG SPIN-ORBIT SCATTERING

1996 ◽  
Vol 10 (15) ◽  
pp. 681-688 ◽  
Author(s):  
M. CASELLE
Keyword(s):  
Magnetic Field ◽  
Universality Class ◽  
Spin Orbit ◽  
Transmission Eigenvalues ◽  
Sutherland Model ◽  
Strong Spin

We discuss the distribution of transmission eigenvalues in the strongly localized regime in the presence of both a magnetic field and spin-orbit scattering. We show that, under suitable conditions, this distribution can be described by a new universality class labelled not only by the index β but also by a new index η. This result is obtained by mapping the problem into that of a suitable Calogero-Sutherland model.

scholarly journals Spin-Orbit Coupling Effects on Transport Properties of Electronic Lieb Lattice in the Presence of Magnetic Field

2021 ◽  
Author(s):  
Elham Sadeghi ◽  
Hamed Rezania
Keyword(s):  
Magnetic Field ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Lieb Lattice ◽  
Thermal Conductivities

Abstract In this paper, the transport properties of a two-dimensional Lieb lattice that is a line-centered square lattice are investigated in the presence of magnetic field and spin-orbit coupling. Specially, we address the temperature dependence of electrical and thermal conductivities as well as Seebeck coefficient due to spin-orbit interaction. We have exploited Green’s function approach in order to study thermoelectric and transport properties of Lieb lattice in the context of Kane-Mele model Hamiltonian. The results for Seebeck coefficient show the sign of thermopower is positive in the presence of spin-orbit coupling. Also the temperature dependence of transport properties indicates that the increase of spin-orbit coupling leads to decrease thermal conductivity however the decrease of gap 1 parameter causes the reduction of thermal conductivity. There is a peak in temperature dependence of thermal conductivity for all values of magnetic fields and spin-orbit coupling strengths. Both electrical and thermal conductivities increase with increasing the temperature at low amounts of temperature due to the increasing of transition rate of charge carriers and excitation of them to the conduction bands. Also we have studied the temperature dependence of spin susceptibility of Lieb monolayer due to both spin orbit coupling and magnetic field factors in details.

Sign in / Sign up

Export Citation Format

Share Document