Precise measurement of the thickness of silicon wafers by double-sided interferometer and bilateral comparison

Metrologia ◽  
2021 ◽  
Author(s):  
Akiko Hirai ◽  
Youichi Bitou ◽  
Jaeseok Bae ◽  
Jungjae Park ◽  
Jonghan Jin
Keyword(s):  
Precise Measurement ◽  
Silicon Wafers ◽  
Bilateral Comparison

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Low temperature drive-in of surface-deposited copper in silicon wafers

2004 ◽  
Vol 27 (1-3) ◽  
pp. 435-438 ◽  
Author(s):  
M. L. Polignano ◽  
D. Caputo ◽  
C. Carpanese ◽  
G. Salvà ◽  
L. Vanzetti
Keyword(s):  
Low Temperature ◽  
Silicon Wafers

PRECISE MEASUREMENT OF ENERGY DISTRIBUTION IN Ga LMIS

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-141-C6-146 ◽  
Author(s):  
M. Komuro ◽  
T. Kato
Keyword(s):  
Energy Distribution ◽  
Precise Measurement

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Sparse Representation Based Dielectric Loss Angle Measurement

2015 ◽  
Vol 9 (1) ◽  
pp. 566-570
Author(s):  
Zhang Ji ◽  
Jianfeng Zheng
Keyword(s):  
Dielectric Loss ◽  
Power Systems ◽  
Sparse Representation ◽  
Precise Measurement ◽  
Angle Measurement ◽  
Measuring Error ◽  
Loss Angle ◽  
Analysis Method ◽  
Electric Capacity ◽  
Dielectric Loss Angle

Precise measurement of dielectric loss angle is very important for electric capacity equipment in recent power systems. When signal-to-noise is low and fundamental frequency is fluctuating, aiming at the measuring error of dielectric loss angle based on some recent Fourier transform and wavelet transform harmonics analysis method, we propose a novel algorithm based on sparse representation, and improved it to be more flexible for signal sampling. Comparison experiments describe the advantages of our method.

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