Materials testing facilities and programmes for fission and ion implantation damage

2017 ◽  
Vol 57 (9) ◽  
pp. 092011 ◽  
Author(s):  
S.M. González de Vicente ◽  
J.-L. Boutard ◽  
S.J. Zinkle ◽  
H. Tanigawa
Keyword(s):  
Ion Implantation ◽  
Materials Testing ◽  
Implantation Damage

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Ion‐implantation‐damage gettering effect in silicon photodiode array camera target

1973 ◽  
Vol 22 (5) ◽  
pp. 238-240 ◽  
Author(s):  
C.M. Hsieh ◽  
J.R. Mathews ◽  
H.D. Seidel ◽  
K.A. Pickar ◽  
C.M. Drum
Keyword(s):  
Ion Implantation ◽  
Silicon Photodiode ◽  
Implantation Damage ◽  
Photodiode Array ◽  
Array Camera

Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG05 ◽  
Author(s):  
Kenji Shiojima ◽  
Shingo Murase ◽  
Shingo Yamamoto ◽  
Tomoyoshi Mishima ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Schottky Contacts ◽  
Two Dimensional ◽  
Internal Photoemission ◽  
Implantation Damage

Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage

1976 ◽  
Vol 29 (11) ◽  
pp. 698-699 ◽  
Author(s):  
C. O. Bozler ◽  
J. P. Donnelly ◽  
W. T. Lindley ◽  
R. A. Reynolds
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Implantation Damage

Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wells

1988 ◽  
Vol 17 (5) ◽  
pp. 405-409 ◽  
Author(s):  
D. R. Myers ◽  
G. W. Arnold ◽  
I. J. Fritz ◽  
L. R. Dawson ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Strained Layer ◽  
Implantation Damage
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