Scanned Electron Beam Annealing of Boron-Implanted Diodes

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

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Characterization of Ion Implantation Damage in Capless Annealed GaAs

MRS Proceedings ◽

10.1557/proc-27-365 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 1

Author(s):

H. Kanber ◽

M. Feng ◽

J. M. Whelan

Keyword(s):

Ion Implantation ◽

Annealing Temperature ◽

Rutherford Backscattering ◽

Buffer Layers ◽

Electrical Activation ◽

Controlled Atmosphere ◽

Damage Characteristics ◽

Implantation Damage ◽

Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

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Transient Annealing of Ion Implanted Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-13-621 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 8

Author(s):

J.S. Williams

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Electrical Properties ◽

Ion Implantation ◽

Solid Phase ◽

Dopant Activation ◽

Implantation Damage ◽

Dopant Redistribution ◽

Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

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