Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wells

1988 ◽  
Vol 17 (5) ◽  
pp. 405-409 ◽  
Author(s):  
D. R. Myers ◽  
G. W. Arnold ◽  
I. J. Fritz ◽  
L. R. Dawson ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Strained Layer ◽  
Implantation Damage

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG05 ◽  
Author(s):  
Kenji Shiojima ◽  
Shingo Murase ◽  
Shingo Yamamoto ◽  
Tomoyoshi Mishima ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Schottky Contacts ◽  
Two Dimensional ◽  
Internal Photoemission ◽  
Implantation Damage

Characterization of ion‐implantation doping of strained‐layer superlattices. I. Structural properties

1986 ◽  
Vol 60 (10) ◽  
pp. 3631-3640 ◽  
Author(s):  
D. R. Myers ◽  
S. T. Picraux ◽  
B. L. Doyle ◽  
G. W. Arnold ◽  
R. M. Biefeld
Keyword(s):  
Ion Implantation ◽  
Structural Properties ◽  
Strained Layer ◽  
Strained Layer Superlattices

Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System

1993 ◽  
Vol 32 (S1) ◽  
pp. 169 ◽  
Author(s):  
Kunio Ichino ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Alloy System ◽  
Strained Layer ◽  
Wide Gap
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