scholarly journals Investigation of resistive switching in Ag/Ge/Si(001) stack by conductive atomic force microscopy

2021 ◽  
Vol 2086 (1) ◽  
pp. 012043
Author(s):  
V A Vorontsov ◽  
D A Antonov ◽  
A V Kruglov ◽  
I N Antonov ◽  
M E Shenina ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Redox Reactions ◽  
Electrical Contact ◽  
Grazing Incidence ◽  
Etch Pits ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ag Electrodes

Abstract We report on an experimental study of resistive switching (RS) of individual dislocations in Ag/Ge/Si(001) memristors by combined grazing incidence ion sputtering of the Ag electrodes and application of Conductive Atomic Force Microscopy to provide an electrical contact to individual Ag-filled dislocations in the Ge layer. Two types of RS were observed corresponding to two different RS mechanisms: (i) drift of Ag+ ions inside the dislocation cores and (ii) RedOx reactions in residual GeO x in the etch pits on the Ge layer surface.

scholarly journals Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Oleg Gorshkov ◽  
Dmitry Filatov ◽  
Dmitry Antonov ◽  
Ivan Antonov
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Oscillation Loop ◽  
In Series

The effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated with the increasing of the noise with broad frequency spectrum related to the redistribution of the oxygen vacancies in YSZ. The electrical oscillations in oscillation loop connected in series to the CAFM probe, the sample, and the bias source related to the excitation of the oscillation loop by the noise in the probe-to-sample contact film have been observed. The effect discovered is promising for application in the memristor devices of new generation.

scholarly journals Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles

Scanning ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Dmitry Filatov ◽  
Inga Kazantseva ◽  
Dmitry Antonov ◽  
Ivan Antonov ◽  
Maria Shenina ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Au Nanoparticles ◽  
Film Surface ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Conductive Atomic Force Microscopy ◽  
Au Nps ◽  
Force Microscopy ◽  
Atomic Force

We report on the investigation of the resistive switching (RS) in the ultrathin (≈5 nm in thickness) yttria-stabilized zirconia (YSZ) films with single layers of Au nanoparticles (NPs) by conductive atomic force microscopy (CAFM). Besides the butterfly-type hysteresis loops in the current-voltage (I-V) curves of the contact of the CAFM probe to the investigated film surface corresponding to the bipolar RS, the negative differential resistance (NDR) has been observed in the I-V curves of the AFM probe contact to the YSZ films with Au NPs in the conductive (“ON”) state. The NDR has been related to the resonant tunneling of electrons through the size-quantized energy states in the ultrafine (1 to 2 nm in diameter) Au NPs built in the conductive filaments in the YSZ films.

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