The SU-8 spin-coating on silicon nanowires formed by cryogenic dry etching

Abstract Arrays of vertically aligned silicon nanowires were fabricated by cryogenic dry etching. The post-processing technology was developed to full coating of arrays of NWs by SU-8 and release the top side of SiNWs. The Schottky diodes were fabricated on arrays of SiNWs with and without SU-8 by gold evaporation. The cryogenic dry etching leads to defect formation with Ea=0.28 eV and concentration lower 5⋅1012 cm−3 in near-surface area in silicon, and no defect are detected in bulk silicon. However, oxygen plasma treatment used to release top side of SiNWs leads to increase of its concentration by two order and formation of defect with Ea=0.39 eV, σ = 1⋅10−16 cm2 and a concentration of 5⋅1014 cm−3 in a bulk of SiNWs deeper than 1 μm.

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Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes

Vacuum ◽

10.1016/j.vacuum.2013.07.024 ◽

2014 ◽

Vol 101 ◽

pp. 92-97 ◽

Cited By ~ 21

Author(s):

Hogyoung Kim ◽

Haeri Kim ◽

Dong-Wook Kim

Keyword(s):

Electrical Properties ◽

Plasma Treatment ◽

Oxygen Plasma ◽

Schottky Diodes ◽

Oxygen Plasma Treatment ◽

Effect Of Oxygen

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Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes

Journal of the Korean Physical Society ◽

10.3938/jkps.69.1321 ◽

2016 ◽

Vol 69 (8) ◽

pp. 1321-1327

Author(s):

V. Janardhanam ◽

I. Jyothi ◽

Shim-Hoon Yuk ◽

Chel-Jong Choi ◽

Sung-Nam Lee ◽

...

Keyword(s):

Plasma Treatment ◽

Oxygen Plasma ◽

Schottky Diodes ◽

Oxygen Plasma Treatment ◽

Electrical Characteristics ◽

Effect Of Oxygen

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Decrease in reflectance of vertically-aligned carbon nanotubes after oxygen plasma treatment

Carbon ◽

10.1016/j.carbon.2014.03.040 ◽

2014 ◽

Vol 74 ◽

pp. 329-332 ◽

Cited By ~ 25

Author(s):

N.A. Tomlin ◽

A.E. Curtin ◽

M. White ◽

J.H. Lehman

Keyword(s):

Carbon Nanotubes ◽

Plasma Treatment ◽

Oxygen Plasma ◽

Oxygen Plasma Treatment ◽

Vertically Aligned Carbon Nanotubes ◽

Aligned Carbon Nanotubes ◽

Vertically Aligned

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High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.347-350.1535 ◽

2013 ◽

Vol 347-350 ◽

pp. 1535-1539

Author(s):

Jian Jun Zhou ◽

Liang Li ◽

Hai Yan Lu ◽

Ceng Kong ◽

Yue Chan Kong ◽

...

Keyword(s):

Plasma Treatment ◽

Breakdown Voltage ◽

Oxygen Plasma ◽

Cutoff Frequency ◽

Chemical Vapor ◽

Current Gain ◽

Organic Chemical ◽

Oxygen Plasma Treatment ◽

Gan Hemt ◽

High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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An Assessment of Surface Treatments for Adhesion of Polyimide Thin Films

Polymers ◽

10.3390/polym13121955 ◽

2021 ◽

Vol 13 (12) ◽

pp. 1955

Author(s):

Marco Cen-Puc ◽

Andreas Schander ◽

Minerva G. Vargas Gleason ◽

Walter Lang

Keyword(s):

Flexible Electronics ◽

Oxygen Plasma ◽

Reactive Ion Etching ◽

Peel Test ◽

Scratch Test ◽

Peel Strength ◽

Surface Treatments ◽

Oxygen Plasma Treatment ◽

Polyimide Films ◽

Ion Etching

Polyimide films are currently of great interest for the development of flexible electronics and sensors. In order to ensure a proper integration with other materials and PI itself, some sort of surface modification is required. In this work, microwave oxygen plasma, reactive ion etching oxygen plasma, combination of KOH and HCl solutions, and polyethylenimine solution were used as surface treatments of PI films. Treatments were compared to find the best method to promote the adhesion between two polyimide films. The first selection of the treatment conditions for each method was based on changes in the contact angle with deionized water. Afterward, further qualitative (scratch test) and a quantitative adhesion assessment (peel test) were performed. Both scratch test and peel strength indicated that oxygen plasma treatment using reactive ion etching equipment is the most promising approach for promoting the adhesion between polyimide films.

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