scholarly journals Photovoltaic characteristics of structures with porous silicon obtained by various technological plans

2021 ◽  
Vol 2086 (1) ◽  
pp. 012102
Author(s):  
D A Shishkina ◽  
N A Poluektova ◽  
I A Shishkin
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Porous Layer ◽  
Pore Formation ◽  
Electrochemical Etching ◽  
Technological Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Optimal Mode ◽  
Photovoltaic Characteristics

Abstract In this work, the influence of technological parameters on the current-voltage characteristics of solar cells with porous silicon is investigated. It is shown that for photosensitive structures with a porous layer, the optimal mode is pore formation by electrochemical etching followed by diffusion. The effect of etching modes affects the character of the photosensitivity curve.

scholarly journals WIDTH OF ENERGY BAND GAP OF NANOPOROUS SEMICONDUCTOR FILMS

2020 ◽  
Vol 17 (2) ◽  
pp. 39-44
Author(s):  
Z.Zh. Zhanabaev ◽  
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Electrochemical Etching ◽  
Semiconductor Films ◽  
Energy Band Gap ◽  
Laser Illumination ◽  
Current Voltage ◽  
Glassy Semiconductor ◽  
Current Voltage Characteristics ◽  
Chalcogenide Glassy Semiconductor

The aim of this work is to experimentally clarify the reasons for the appearance of jumps in the current and memory of semiconductor nanoporous structures.Porous nanostructures were obtained by electrochemical etching. The current-voltage characteristics of the samples were measured for porous silicon and on thin films of a chalcogenide glassy semiconductor. The existence of jump-like switching and current hysteresis in porous silicon nanofilms under laser illumination is shown experimentally.A connection between the switching voltage values and the dependence of the band gap on the porosity of nanofilms is found. These results make it possible to construct a theory of current switching and its hysteresis based on the concepts of the theory of second-order phase transitions.

Solar Cell Manufacturing Method with the Structure of the Bulk Heterojunction Based on Organic Semiconductors with a Direct Architecture

2016 ◽  
Vol 845 ◽  
pp. 224-227 ◽  
Author(s):  
Danila Saranin ◽  
Marina Orlova ◽  
Sergey Didenko ◽  
Oleg Rabinovich ◽  
Andrey Kryukov
Keyword(s):  
Solar Cells ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Fill Factor ◽  
Research Output ◽  
Bulk Heterojunction ◽  
Organic Basis ◽  
Manufacturing Method ◽  
Current Voltage ◽  
Current Voltage Characteristics

This article presents the results of research output voltage characteristics of solar cells on an organic basis with the use of P3HT: PCBM system. There were produced organic solar cells in a coating in air, current-voltage characteristics were measured. It was determined the characteristic influence of a substrate cleaning and annealing temperature of layers applied on fill factor and conversion efficiency.

Contact fault characterisation of complex silicon solar cells: a guideline based on current voltage characteristics and luminescence imaging

2015 ◽  
Vol 24 (3) ◽  
pp. 326-339 ◽  
Author(s):  
Milan Padilla ◽  
Christian Reichel ◽  
Nikolaus Hagedorn ◽  
Andreas Fell ◽  
Roman Keding ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Luminescence Imaging ◽  
Current Voltage ◽  
Current Voltage Characteristics
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