scholarly journals Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors

2021 ◽  
Vol 2103 (1) ◽  
pp. 012139
Author(s):  
S V Bakhlanov ◽  
N V Bazlov ◽  
I D Chernobrovkin ◽  
A V Derbin ◽  
I S Drachnev ◽  
...  
Keyword(s):  
Room Temperature ◽  
Reverse Current ◽  
Alpha Particles ◽  
Surface Barrier ◽  
Semiconductor Detectors ◽  
Barrier Detector ◽  
Radiation Induced ◽  
And Performance ◽  
P Type ◽  
Α Particles

Abstract Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated. The detectors were irradiated at room temperature up to a total number of the registered α-particles Nα equal to 6 × 109. Prolonged irradiation has resulted in a deterioration of the detectors energy resolution ability and it was found that the increase of α-peaks broadening can be described by a linear function of Nα with a slope Δσ/ΔNα ∼ (1.4–1.8) × 10–9 keV/α for both detectors. Resolution deterioration was associated with the increase of the detectors leakage current, which proceeds linearly with the number of absorbed α-particles with the slope ΔI/ΔNα ∼ (7-17) × 10-17 A/α. The increase of the detectors reverse current was related with appearance of radiation-induced defect level at 0.56 eV above the valence band.

Thick Surface Barrier Detectors Made of Ultra-High Purity P-Type Si Single Crystal

1982 ◽  
Vol 16 ◽  
Author(s):  
F. Shiraishi ◽  
Y. Takami ◽  
M. Hosoe ◽  
Y. Ohsawa ◽  
H. Sato
Keyword(s):  
High Purity ◽  
Molecular Sieves ◽  
Room Temperature ◽  
Surface Barrier ◽  
Entrance Window ◽  
Ultra High Purity ◽  
Barrier Detector ◽  
Barrier Detectors ◽  
P Type ◽  
Detector Material

ABSTRACTThe detector material used in this experimments is Ultra-High Purity p-type Si crystal. The material was single-crystalized through floating zone process from poly-crystal grown by thermal decomposition of highly refined mono-silane gas which had been purified by molecular sieves of specially prepared Zeolite powder.The resisitivity at room temperature is normally above 30 kΩ.cm, and the value of the highest grade ones exceeds 100kΩ.cm which corresponds to the Boron concentration of 1.5×l011 B/cm3.The potentiality of this material for detector use was investigated through Surface Barrier Detector fabrication. Detectors of above 4 mm thick and of excellent characteristics both at room temperature and at liq. N2 temperature could readily be fabricated. Owing to tie extremely high resisitivity, detectors can be made either partially depleted or totally depleted simply by properly selecting the wafer resisitivity and the thickness.In detector fabrication, the proper surface chemical treatment is very important, and seriously affects the leakage current and breakdown characteristics.Ultra-High Purity Si is promising as new detector material and has good potentiality to replace Si(Li) as followings:1) simple and easy detector fabrication,2) potentiality of thick detector fabrication (∼1cm),3) no precipitation problem of Li ions, and4) feasibility of thick ⊿E detector with thin entrance window on both faces.

scholarly journals MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2887-2892
Author(s):  
Brittany Muntifering ◽  
Jianmin Qu ◽  
Khalid Hattar
Keyword(s):  
Dislocation Loop ◽  
Hydrogen Isotope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
In Situ Tem ◽  
Loop Formation ◽  
Radiation Induced ◽  
Formation And Evolution ◽  
And Performance ◽  
Induced Defects

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

A Preliminary Observation on AgGaSe2 as a Nuclear Radiation Detector

1982 ◽  
Vol 16 ◽  
Author(s):  
Eiji Sakai ◽  
Hiromichi Horinaka ◽  
Hajimu Sonomura ◽  
Takeshi Miyauchi
Keyword(s):  
Radiation Detector ◽  
Silicon Detector ◽  
Alpha Particles ◽  
Nuclear Radiation ◽  
Surface Barrier ◽  
Applied Bias Voltage ◽  
Nuclear Radiation Detector ◽  
Barrier Detector ◽  
Temperature Noise ◽  
Silicon Surface Barrier Detector

ABSTRACTAn about 108 ohm-cm AgGaSe2 crystal of 0.5 mm × 4 mm × 4 mm was polished and contacts were made by evaporating 130 μg/cm2 gold of 3 mm diameter on the two faces of the crystal. The detector was tested using 5.5 MeV alpha-particles at room temperature. Noise increased above an applied bias voltage of 80 V. For + 50 V applied on the electrode opposite to the particle incident electrode, i.e., for electron traversal mode, the preamplifier output pulses showed a risetime of 20 μs and an amplitude of about one-tenth of that obtained from a silicon surface-barrier detector whereas the silicon detector showed a risetime of 0.07 μs. For - 50 V applied on the same electrode, i.e., for hole traversal mode, no pulses were observed.

Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes

2000 ◽  
Vol 640 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
Y. Gao ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Turn On ◽  
Current Voltage ◽  
Forward Voltage Drop ◽  
P Type ◽  
State Resistance

ABSTRACTForward and reverse current – voltage (I–V) characteristics of N and P-type Schottky diodes on 6H-SiC are compared in a temperature range of room temperature to 550K. While the room temperature I–V characteristics of the N-type Schottky diode after turn-on is more or less linear up to ∼ 100 A/cm2, the I–V characteristics of the P-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC. High temperature measurements indicate that while the on-state resistance of N type Schottky diodes increases with increase in temperature, the on-state resistance of P type Schottky diodes decreases with increase in temperature until a certain temperature. While the N-type diodes seem to have soft breakdown characteristics, the P-type diodes exhibit more or less abrupt breakdown characteristics.

Induction of Single-and Double-Strand Breaks in Plasmid DNA by Monoenergetic Alpha-Particles with Energies below the Bragg-Maximum

1997 ◽  
Vol 52 (5-6) ◽  
pp. 364-372 ◽  
Author(s):  
Volker Scholz ◽  
Jürgen Weidner ◽  
Wolfgang Köhnlein ◽  
Dieter Frekers ◽  
Heinrich Johannes Wörtche
Keyword(s):  
Plasmid Dna ◽  
Alpha Particles ◽  
Double Strand Breaks ◽  
Dose Effect ◽  
Surface Barrier ◽  
Model Calculations ◽  
Strand Breaks ◽  
Single Strand Breaks ◽  
Ion Accelerator ◽  
Barrier Detector

AbstractThe yield of single-strand breaks (ssb) and double-strand breaks (dsb) produced by alpha-particles at the end of their track in DNA-films was determined experimentally. Helium nuclei were accelerated to 600 keV in the 400 kV ion accelerator and scattered at a carbon target. The elastically scattered alpha-particles with energies of 344 keV and 485 keV were used to irradiate supercircular plasmid DNA in vacuo. For the dosimetry of the alpha-particles a surface barrier detector was used and the energy distribution of the alpha-particles determined. The energy loss of the particles in the DNA-layer was calculated. DNA samples were separated into the three conformational isomers using agarose gel electrophoresis. After fluorochromation the number of ssb and dsb per plasmid DNA molecule was established from the band intensities assuming the validity of Poisson statistics. Linear dose effect correlations were found for ssb and dsb per plasmid molecule. In the case of 344 keV-alpha-particles the yield of dsb was (8.6 ± 0 .9)× 10−11 breaks/Gy × dalton. The ratio of ssb/dsb was 0.5 ± 0.2. This is at least a factor of six larger than the ratio found in experiments with higher energy alpha-particles and from model calculations. Similar experiments with protons yielded a relative biological effectiveness (rbe) value of 2.8 for the induction of double-strand breaks by track end alpha-particles.

P-Type Silicon Surface Barrier Detector Used for X-Ray Dosimetry

1983 ◽  
Vol 5 (2) ◽  
pp. 271-275
Author(s):  
Hisao YAMAMOTO ◽  
Satoru HATAKEYAMA ◽  
Toshiyuki NORIMURA ◽  
Takehiko TSUCHIYA
Keyword(s):  
Silicon Surface ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
X Ray ◽  
Type Silicon ◽  
Barrier Detector ◽  
P Type ◽  
Silicon Surface Barrier Detector

Electrically Active Defects Induced by Alpha‐Particle Irradiation in p‐type Si Surface Barrier Detector

2021 ◽  
Author(s):  
Sergey Bakhlanov ◽  
Nikolay Bazlov ◽  
Ilia Chernobrovkin ◽  
Denis Danilov ◽  
Alexandr Derbin ◽  
...  
Keyword(s):  
Alpha Particle ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Particle Irradiation ◽  
Barrier Detector ◽  
P Type
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