scholarly journals Optical and structural studies of Hg0.7Cd0.3Te samples grown by various methods

2021 ◽  
Vol 2103 (1) ◽  
pp. 012148
Author(s):  
D A Andryushchenko ◽  
M S Ruzhevich ◽  
A M Smirnov ◽  
N L Bazhenov ◽  
K D Mynbaev
Keyword(s):  
Molar Fraction ◽  
Optoelectronic Devices ◽  
Considerable Degree ◽  
Structural Quality ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Disorder ◽  
Photoluminescence Studies

Abstract Photoluminescence and X-ray diffraction (XRD) were used for the studies of the properties of HgCdTe samples with CdTe molar fraction x=0.3 grown by various methods. According to the results of photoluminescence studies, all samples possessed a considerable degree of alloy disorder, yet the scale of the disorder seemed not to be directly related to the structural quality of the material as revealed using XRD. Prospects of using HgCdTe material grown by various methods in optoelectronic devices are discussed.

scholarly journals Оптические и структурные свойства эпитаксиальных слоев Hg-=SUB=-0.7-=/SUB=-Cd-=SUB=-0.3-=/SUB=-Te

2021 ◽  
Vol 55 (11) ◽  
pp. 1040
Author(s):  
Д.А. Андрющенко ◽  
М.С. Ружевич ◽  
А.М. Смирнов ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
...  
Keyword(s):  
Solid Solution ◽  
Optical Properties ◽  
Diffraction Data ◽  
Epitaxial Films ◽  
Structural Quality ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Photoluminescence Studies

The results of comparative studies of the optical and structural properties of Hg0.7Cd0.3Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2−300K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed.

scholarly journals Оптические и структурные свойства твердых растворов HgCdTe с большим содержанием CdTe

2020 ◽  
Vol 54 (12) ◽  
pp. 1302
Author(s):  
К.Д. Мынбаев ◽  
Н.Л. Баженов ◽  
А.М. Смирнов ◽  
Н.Н. Михайлов ◽  
В.Г. Ремесник ◽  
...  
Keyword(s):  
Solid Solution ◽  
Optical Transmission ◽  
Molecular Beam ◽  
Molar Fraction ◽  
Significant Degree ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Photoluminescence Studies

This work presents the results of studying the optical transmission, photoconductivity, photoluminescence, and X-ray diffraction of HgCdTe solid solution samples with a high (molar fraction 0.7–0.8) CdTe content, grown by molecular beam (MBE) and liquid-phase (LPE) epitaxy. It was shown that the studied material had a significant degree of disordering of the solid solution, which was greater in structures grown by MBE on GaAs substrates than in films grown by LPE. Photoluminescence studies have revealed states in the band gap, which were previously considered not typical of HgCdTe films grown on GaAs substrates, but only of films grown on Si. On the whole, the high quality of the material with a high CdTe content, grown by MBE and used to create the currently widely demanded HgTe / HgCdTe nanostructures, was confirmed.

scholarly journals Исследование этапов превращения кремния в карбид кремния в процессе атомного замещения методами полного внешнего отражения рентгеновских лучей и рентгеновской дифрактомерии

2022 ◽  
Vol 64 (3) ◽  
pp. 326
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Е.В. Осипова ◽  
В.М. Стожаров
Keyword(s):  
Structural Quality ◽  
Total External Reflection ◽  
X Rays ◽  
Reflection Method ◽  
X Ray Diffraction ◽  
Modified Technique ◽  
Substitution Method ◽  
X Ray ◽  
Sic Films

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion.

Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

2014 ◽  
Vol 59 (3) ◽  
pp. 315-322 ◽  
Author(s):  
A. E. Blagov ◽  
A. L. Vasiliev ◽  
A. S. Golubeva ◽  
I. A. Ivanov ◽  
O. A. Kondratev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

INFLUENCE OF Al MONOLAYERS ON THE PROPERTIES OF AlN LAYERS ON Si (111)

2009 ◽  
Vol 16 (01) ◽  
pp. 99-103 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Buffer Layers ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Surfaces ◽  
Gan On Si ◽  
Aln Buffer ◽  
Xrd Techniques ◽  
Substrate Temperatures

High-quality aluminum nitride ( AlN ) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on Si . Growth using AlN buffer layers leads to Al -polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Al -rich as possible, although Al droplets tend to form. Before starting the AlN growth, a few monolayers of Al are deposited on the substrate to avoid the formation of Si 3 N 4. X-ray diffraction (XRD) techniques were employed to determine the surface and structural quality of the layers. XRD revealed that monocrystalline AlN was obtained. Best AlN films were obtained at high substrate temperatures (875°C) and III/V ratios close to stoichiometry.

High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

1996 ◽  
Vol 449 ◽  
Author(s):  
A. Saxler ◽  
M. A. Capano ◽  
W. C. Mitchel ◽  
P. Kung ◽  
X. Zhang ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
Lattice Points ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Primary Mechanism

ABSTRACTX-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the curves are broadened. The GaN films used in this study were grown by low pressure metalorganic chemical vapor deposition (MOCVD) on (00•1) sapphire substrates. GaN films with both broad and very narrow (open detector linewidth of 40 arcseconds for the (00•2) GaN reflection) rocking curves are examined in this work. Reciprocal space maps of both symmetric and asymmetric reciprocal lattice points are used to determine that the cause of the broadening of GaN rocking curves is a limited in-plane coherence length.

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films

2011 ◽  
Vol 287-290 ◽  
pp. 1456-1459 ◽  
Author(s):  
P. C Chang ◽  
C. L Yu ◽  
Y. W Jahn ◽  
S. J Chang ◽  
K. H Lee
Keyword(s):  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Effect Of Temperature ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Different Temperatures ◽  
Peak Emission

InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740°C to 830°C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

scholarly journals X Ray Diffraction: An Approach to Structural Quality of Biological Preserved Tissues in Tissue Banks

10.5772/33725 ◽  
2012 ◽  
Author(s):  
H. Perez ◽  
Mc. Saldias ◽  
G. Sanchez ◽  
P. Martucci ◽  
Mc. Acosta ◽  
...  
Keyword(s):  
Structural Quality ◽  
Tissue Banks ◽  
X Ray Diffraction ◽  
X Ray
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