Assessment of the structural quality of CdTe/Cd1−xZnxTe strained superlattices by high‐resolution x‐ray diffraction and photoluminescence studies

Abstract Photoluminescence and X-ray diffraction (XRD) were used for the studies of the properties of HgCdTe samples with CdTe molar fraction x=0.3 grown by various methods. According to the results of photoluminescence studies, all samples possessed a considerable degree of alloy disorder, yet the scale of the disorder seemed not to be directly related to the structural quality of the material as revealed using XRD. Prospects of using HgCdTe material grown by various methods in optoelectronic devices are discussed.

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Оптические и структурные свойства эпитаксиальных слоев Hg-=SUB=-0.7-=/SUB=-Cd-=SUB=-0.3-=/SUB=-Te

Физика и техника полупроводников ◽

10.21883/ftp.2021.11.51558.9689 ◽

2021 ◽

Vol 55 (11) ◽

pp. 1040

Author(s):

Д.А. Андрющенко ◽

М.С. Ружевич ◽

А.М. Смирнов ◽

Н.Л. Баженов ◽

К.Д. Мынбаев ◽

...

Keyword(s):

Solid Solution ◽

Optical Properties ◽

Diffraction Data ◽

Epitaxial Films ◽

Structural Quality ◽

Bulk Crystals ◽

X Ray Diffraction ◽

X Ray ◽

Photoluminescence Studies

The results of comparative studies of the optical and structural properties of Hg0.7Cd0.3Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2−300K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed.

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Исследование этапов превращения кремния в карбид кремния в процессе атомного замещения методами полного внешнего отражения рентгеновских лучей и рентгеновской дифрактомерии

Физика твердого тела ◽

10.21883/ftt.2022.03.52093.232 ◽

2022 ◽

Vol 64 (3) ◽

pp. 326

Author(s):

С.А. Кукушкин ◽

А.В. Осипов ◽

Е.В. Осипова ◽

В.М. Стожаров

Keyword(s):

Structural Quality ◽

Total External Reflection ◽

X Rays ◽

Reflection Method ◽

X Ray Diffraction ◽

Modified Technique ◽

Substitution Method ◽

X Ray ◽

Sic Films

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion.

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INFLUENCE OF Al MONOLAYERS ON THE PROPERTIES OF AlN LAYERS ON Si (111)

Surface Review and Letters ◽

10.1142/s0218625x09012354 ◽

2009 ◽

Vol 16 (01) ◽

pp. 99-103 ◽

Cited By ~ 5

Author(s):

L. S. CHUAH ◽

Z. HASSAN ◽

H. ABU HASSAN

Keyword(s):

Buffer Layers ◽

Structural Quality ◽

X Ray Diffraction ◽

X Ray ◽

Flat Surfaces ◽

Gan On Si ◽

Aln Buffer ◽

Xrd Techniques ◽

Substrate Temperatures

High-quality aluminum nitride ( AlN ) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on Si . Growth using AlN buffer layers leads to Al -polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Al -rich as possible, although Al droplets tend to form. Before starting the AlN growth, a few monolayers of Al are deposited on the substrate to avoid the formation of Si 3 N 4. X-ray diffraction (XRD) techniques were employed to determine the surface and structural quality of the layers. XRD revealed that monocrystalline AlN was obtained. Best AlN films were obtained at high substrate temperatures (875°C) and III/V ratios close to stoichiometry.

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On influence of collimating slit imperfections on the quality of experimental data in high-resolution x-ray diffraction

Physics Letters A ◽

10.1016/j.physleta.2007.11.033 ◽

2008 ◽

Vol 372 (13) ◽

pp. 2155-2158

Author(s):

Aliaksandr V. Darahanau ◽

Andrei Y. Nikulin ◽

Ruben A. Dilanian

Keyword(s):

Experimental Data ◽

High Resolution ◽

X Ray Diffraction ◽

X Ray

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High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-449-477 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 7

Author(s):

A. Saxler ◽

M. A. Capano ◽

W. C. Mitchel ◽

P. Kung ◽

X. Zhang ◽

...

Keyword(s):

Metalorganic Chemical Vapor Deposition ◽

Reciprocal Lattice ◽

Chemical Vapor ◽

Lattice Points ◽

Structural Quality ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates ◽

Primary Mechanism

ABSTRACTX-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the curves are broadened. The GaN films used in this study were grown by low pressure metalorganic chemical vapor deposition (MOCVD) on (00•1) sapphire substrates. GaN films with both broad and very narrow (open detector linewidth of 40 arcseconds for the (00•2) GaN reflection) rocking curves are examined in this work. Reciprocal space maps of both symmetric and asymmetric reciprocal lattice points are used to determine that the cause of the broadening of GaN rocking curves is a limited in-plane coherence length.

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Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

Materials ◽

10.3390/ma13010061 ◽

2019 ◽

Vol 13 (1) ◽

pp. 61 ◽

Cited By ~ 2

Author(s):

Sondes Bauer ◽

Adriana Rodrigues ◽

Lukáš Horák ◽

Xiaowei Jin ◽

Reinhard Schneider ◽

...

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Lattice Parameter ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray

Structural quality of LuFeO 3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO 3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO 3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO 3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO 3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO 3 by reducing the misfit of the LuFeO 3 lattice with respect to the material underneath.

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Influence of the Nitridation Time after the Al Pre-Seeded Layer on the Properties of GaN Layer Grown on Si (1 1 1)

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.887-888.446 ◽

2014 ◽

Vol 887-888 ◽

pp. 446-449

Author(s):

Dong Guo Zhang ◽

Zhong Hui Li ◽

Da Qing Peng ◽

Xun Dong

Keyword(s):

High Resolution ◽

Aluminum Nitride ◽

Epitaxial Growth ◽

Epitaxial Layer ◽

Critical Value ◽

X Ray Diffraction ◽

X Ray ◽

Nitridation Time ◽

The One

The epitaxial growth of Gallium Nitride (GaN) on 2 inch Si (1 1 1) substrates was investigated, and it was found that by inserting a surface nitridation layer prior to Aluminum Nitride (AlN) nucleation upon substrate, the discoid defects and cracks on the surface were suppressed. Furthermore, compared with the GaN epitaxial layer grown without nitridation, the one with a 30 sec. nitridation layer showed a twice brighter integrated photoluminescence (PL) spectra intensity and a (0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 13.6 arcminute. The crystalline quality of GaN epitaxial layer became worse when the nitridation time exceeded a critical value, and even more cracks appeared on the surface although no discoid defect appeared anymore.

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High Resolution X-Ray Reflectometry and Diffraction of CaF2/Si(111) Structures Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-484-661 ◽

1997 ◽

Vol 484 ◽

Cited By ~ 1

Author(s):

E. Abramof ◽

S. O. Ferreira ◽

P. H. O Rappl ◽

A. Y. Ueta ◽

C. Boschetti ◽

...

Keyword(s):

High Resolution ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Interface Roughness ◽

X Ray Diffraction ◽

Reflectivity Spectrum ◽

X Ray ◽

Interference Fringes ◽

Reflectivity Spectra

AbstractCaF2 layers were grown by molecular beam epitaxy on differently prepared Si(111) substrates. X-ray reflectivity spectra were measured and fitted. From the fitting process, the thickness of the CaF2 layer was precisely (within 1 Å) determined and the CaF2/Si interface roughness was also obtained. This roughness was used as an evaluation parameter for the quality of the layers. The CaF2/Si sample from which the intentional oxide was desorpted at 800°C inside the growth chamber exhibited the most clear x-ray reflectivity spectrum with very well resolved interference fringes. The epitaxial relations of the CaF2/Si samples grown at temperatures between 250 and 700°C were determined from x-ray diffraction analysis.

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