scholarly journals Effect of fluoropolymer spots on pool boiling heat transfer

2021 ◽  
Vol 2119 (1) ◽  
pp. 012087
Author(s):  
V Yu Vladimirov ◽  
S Ya Khmel ◽  
A I Safonov ◽  
V V Semionov ◽  
E A Chinnov
Keyword(s):  
Heat Transfer ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Boiling Heat Transfer ◽  
Silicon Oxide ◽  
Pool Boiling ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Pool Boiling Heat Transfer ◽  
Plasma Chemical Vapor Deposition

Abstract In this paper, the investigation of pool boiling heat transfer on biphilic micro/nanostructured surfaces is presented. An array of micrococoons from silicon oxide nanowires was synthesized on the surface of a copper heater using the gas-jet electron beam plasma chemical vapor deposition method. The biphilic properties of the surface were achieved by applying fluoropolymer spots by hot wire chemical vapor deposition. Technology of creating biphilic surfaces was developed and boiling curves were obtained for used samples. The advantages of using a biphilic surface to enhance heat transfer were demonstrated in comparison with a smooth surface and a micro-nanostructured surface without local hydrophobic fluoropolymer regions. This technology can be applied to enhance boiling heat transfer.

Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

2002 ◽  
Vol 742 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Ryoji Kosugi ◽  
Shinichi Nakashima ◽  
Kenji Fukuda ◽  
Kazuo Arai
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Plasma Chemical ◽  
Step Bunching ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Films

ABSTRACTHomoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.

Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

2005 ◽  
Vol 480-481 ◽  
pp. 71-76 ◽  
Author(s):  
Jin Chun Jiang ◽  
Wen Juan Cheng ◽  
Yang Zhang ◽  
He Sun Zhu ◽  
De Zhong Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition

Carbon nitride films were grown on Si substrates by a microwave plasma chemical vapor deposition method, using mixture of N2, CH4 and H2 as precursor. Scanning electron microscopy shows that the films consisted of a large number of hexagonal crystallites. The dimension of the largest crystallite is about 3 µm. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp2 and sp3 configurations. The X-ray diffraction pattern indicates that the major part of the films is composed of α-, β-, pseudocubic C3N4 and graphitic C3N4. The Raman peaks match well with the calculated Raman frequencies of α- and β-C3N4, revealing the formation of the α- and β-C3N4 phase.

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