The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition

1998 ◽  
Vol 83 (10) ◽  
pp. 5386-5393 ◽  
Author(s):  
M. Zhu ◽  
Y. Han ◽  
R. B. Wehrspohn ◽  
C. Godet ◽  
R. Etemadi ◽  
...  
2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  

2001 ◽  
Vol 40 (Part 1, No. 10) ◽  
pp. 6099-6103 ◽  
Author(s):  
Hidetaka Anma ◽  
Yuuji Yoshimoto ◽  
Mariko Tanaka ◽  
Hiroyuki Takatsuka ◽  
Yoshinori Hatanaka

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