The relationship between the single event upset and the order of sensitive transistors in flip-flop layout
2021 ◽
Vol 2137
(1)
◽
pp. 012049
Keyword(s):
Abstract Traditionally, it is believed that only reverse biased PN junctions can collect ionized electron-hole pairs. Therefore, only the drain of the transistor in the off-state can be considered as a sensitive node, which is easy to absorb charge and cause upset. This paper finds that on-state transistors can also become sensitive nodes. This paper studies the relationship between SEU and the order of transistors in the flip-flop layout. It is found that the adjacent placement of on-state sensitive transistors can promote the occurrence of SEU, and a targeted hardened plan is proposed. The results of this paper are helpful for the design of the radiation-resistant layout of the flip-flop.
2009 ◽
Vol 56
(6)
◽
pp. 3130-3137
◽
2018 ◽
Vol 65
(8)
◽
pp. 1776-1782
◽
2013 ◽
Vol 60
(6)
◽
pp. 4368-4373
◽
Keyword(s):
2010 ◽
Vol E93-D
(12)
◽
pp. 3407-3409
2017 ◽
Vol 64
(1)
◽
pp. 683-688
◽