Radiation-doped SiC*/Si heterostructure formation and defects evolution

The authors consider heterostructures of silicon carbide obtained during endotaxy on silicon substrates. The question is raised in connection with the description of the endotaxy process itself at the structural level. Authors focus on the technological aspects of the formation of a stable β-SiC/Si heterostructure by endotaxy in relation to the evolution of point defects of various nature and their probable association models with the participation of a radionuclide impurity at the micro-alloying level: 1) the growth of the SiC*/Si thin layer with C-14 atoms in the doping process; 2) physical properties of defects formation; 3) some interface between properties and efficiency.