scholarly journals Mid-infrared light absorption by photo-excited charge carriers in Ge/Si quantum dots

2015 ◽  
Vol 586 ◽  
pp. 012001
Author(s):  
L E Vorobjev ◽  
D A Firsov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
R M Balagula ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Absorption ◽  
Charge Carriers ◽  
Infrared Light ◽  
Mid Infrared ◽  
Si Quantum Dots

scholarly journals Dynamics of mid-infrared light absorption related to photoexcited charge carriers in Ge/Si quantum dots

2015 ◽  
Vol 643 ◽  
pp. 012077
Author(s):  
O I Kirilenko ◽  
R M Balagula ◽  
A N Sofronov ◽  
V Yu Panevin ◽  
L E Vorobjev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Absorption ◽  
Charge Carriers ◽  
Infrared Light ◽  
Mid Infrared ◽  
Si Quantum Dots

Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots

2015 ◽  
Vol 87 ◽  
pp. 53-57 ◽  
Author(s):  
A.N. Sofronov ◽  
L.E. Vorobjev ◽  
D.A. Firsov ◽  
V.Yu. Panevin ◽  
R.M. Balagula ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Absorption ◽  
Mid Infrared ◽  
Si Quantum Dots

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Temperature depopulation of the GeSi/Si quantum dots with non-equilibrium charge carriers

2017 ◽  
Vol 107 ◽  
pp. 228-233 ◽  
Author(s):  
A.N. Sofronov ◽  
L.E. Vorobjev ◽  
D.A. Firsov ◽  
R.M. Balagula ◽  
A.A. Tonkikh
Keyword(s):  
Quantum Dots ◽  
Charge Carriers ◽  
Equilibrium Charge ◽  
Si Quantum Dots ◽  
Non Equilibrium

Temperature evolution of the photoexcited charge carriers dynamics in Ge/Si quantum dots

2019 ◽  
Vol 106 ◽  
pp. 85-89 ◽  
Author(s):  
R.M. Balagula ◽  
A.N. Sofronov ◽  
L.E. Vorobjev ◽  
D.A. Firsov ◽  
A.A. Tonkikh
Keyword(s):  
Quantum Dots ◽  
Charge Carriers ◽  
Temperature Evolution ◽  
Si Quantum Dots

scholarly journals Charge carrier kinetics in GeSi/Si quantum dots probed by mid-infrared radiation

2017 ◽  
Vol 864 ◽  
pp. 012069 ◽  
Author(s):  
A N Sofronov ◽  
L E Vorobjev ◽  
D A Firsov ◽  
R M Balagula ◽  
A A Tonkikh
Keyword(s):  
Quantum Dots ◽  
Charge Carrier ◽  
Infrared Radiation ◽  
Mid Infrared ◽  
Si Quantum Dots

Tunable Enhanced Mid-Infrared Light Absorption in Graphene

2017 ◽  
Author(s):  
Alireza Safaei ◽  
Sayan Chandra ◽  
Michael N. Leuenberger ◽  
Debashis Chanda
Keyword(s):  
Light Absorption ◽  
Infrared Light ◽  
Mid Infrared

Mid infrared optical properties of Ge/Si quantum dots with different doping level

2013 ◽  
Author(s):  
A. N. Sofronov ◽  
D. A. Firsov ◽  
L. E. Vorobjev ◽  
V. A. Shalygin ◽  
V. Yu. Panevin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Doping Level ◽  
Mid Infrared ◽  
Si Quantum Dots ◽  
Infrared Optical Properties

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING

2007 ◽  
Vol 06 (03n04) ◽  
pp. 241-244 ◽  
Author(s):  
D. A. FIRSOV ◽  
L. E. VOROBJEV ◽  
M. A. BARZILOVICH ◽  
V. YU. PANEVIN ◽  
I. V. MIKHAYLOV ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Light Absorption ◽  
Optical Pumping ◽  
Light Emission ◽  
Optical Excitation ◽  
Ground Level ◽  
Infrared Light ◽  
Mid Infrared ◽  
Gaas Quantum Dot

Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence spectra and interband light absorption with intensity of interband optical excitation is investigated in InAs / GaAs quantum dot structures. Optically induced intersubband mid-infrared light absorption is studied in undoped tunnel-coupled GaAs / AlGaAs quantum wells. The stabilization of the electron concentration at the ground level of tunnel-coupled quantum wells under increasing pumping level is established.

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