Investigation of parameters of new MAPD-3NM silicon photomultipliers
Keyword(s):
Abstract In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
1994 ◽
2012 ◽
Vol 1
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pp. 235-238
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2017 ◽
Vol 12
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pp. 345-350
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2012 ◽
Vol 2
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pp. 657-670
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2020 ◽
Vol 7
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pp. 29-33
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2011 ◽
Vol 6
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pp. C10003-C10003
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