scholarly journals In situ growth of CNTs on carbon fiber by chemical vapor deposition

2019 ◽  
Vol 354 ◽  
pp. 012075
Author(s):  
Z Q Yao ◽  
C G Wang ◽  
Y X Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fiber ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Growth

In-situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition

2000 ◽  
Vol 611 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Heui Seung Lee ◽  
Jong Ho Park ◽  
Byung Tae Ahn
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Growth ◽  
Si Substrate ◽  
Flat Interface ◽  
Initial Deposition ◽  
Kinetics Of

ABSTRACTUniform epitaxial CoSi2 layers have been grown in situ on a (100) Si substrate at temperatures near 600 °C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η5-C5H5)(CO)2. The growth kinetics of an epitaxial CoSi2 layer on a Si (100) substrate was investigated at temperatures ranging from 575 to 650 °C. In initial deposition stage, platelike discrete CoSi2 spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete CoSi2 plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial CoSi2 growth on (100) Si, the activation energy of the parabolic growth was found to be 2.80 eV. The growth rate seems to be controlled by the diffusion of Co through the CoSi2 layer.

One-Step In-Situ Growth of Core-Shell SiC@Graphene Nanoparticles/Graphene Hybrids by Chemical Vapor Deposition

2016 ◽  
Vol 3 (8) ◽  
pp. 1500806 ◽  
Author(s):  
Jeanne N'Diaye ◽  
Ons Hmam ◽  
Mansouria Zidi ◽  
Ana C. Tavares ◽  
Ricardo Izquierdo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Core Shell ◽  
In Situ Growth ◽  
One Step ◽  
Graphene Nanoparticles
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