scholarly journals The study of titanium oxynitride coatings solubility deposited by reactive magnetron sputtering

2016 ◽  
Vol 135 ◽  
pp. 012026 ◽  
Author(s):  
L A Leonova ◽  
E L Boytsova ◽  
A A Pustovalova
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxynitride Coatings

Surface Morphology of Titanium Oxide and Oxynitride Coatings Deposited by Reactive Magnetron Sputtering

2015 ◽  
Vol 1085 ◽  
pp. 134-138 ◽  
Author(s):  
Galina V. Arysheva ◽  
Nina M. Ivanova ◽  
Alla A. Pustovalova ◽  
Maksim E. Konischev
Keyword(s):  
Stainless Steel ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Titanium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Vascular Stents ◽  
Coating Surface ◽  
Oxynitride Coatings ◽  
Biocompatible Coatings

This paper presents the results of study of the surface morphology of thin (~ 200 nm) biocompatible coatings based on titanium oxide and oxynitride deposited by reactive magnetron sputtering for vascular stents made from stainless steel. The analysis of the roughness of the coating surface was performed for describe qualitatively their topography.

Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

Microstructures and properties of novel nanocomposite WNx coatings deposited by reactive magnetron sputtering

2020 ◽  
Vol 512 ◽  
pp. 145508 ◽  
Author(s):  
Yang Deng ◽  
Shiheng Yin ◽  
Yue Hong ◽  
Yi Wang ◽  
Yi Hu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron
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