Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α -MoO 3 atomic crystals

2D Materials ◽  
2018 ◽  
Vol 5 (3) ◽  
pp. 035033 ◽  
Author(s):  
Mianzeng Zhong ◽  
Ke Zhou ◽  
Zhongming Wei ◽  
Yan Li ◽  
Tao Li ◽  
...  
2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Mei Zhao ◽  
Sijie Yang ◽  
Kenan Zhang ◽  
Lijie Zhang ◽  
Ping Chen ◽  
...  

AbstractNonlayered two-dimensional (2D) materials have attracted increasing attention, due to novel physical properties, unique surface structure, and high compatibility with microfabrication technique. However, owing to the inherent strong covalent bonds, the direct synthesis of 2D planar structure from nonlayered materials, especially for the realization of large-size ultrathin 2D nonlayered materials, is still a huge challenge. Here, a general atomic substitution conversion strategy is proposed to synthesize large-size, ultrathin nonlayered 2D materials. Taking nonlayered CdS as a typical example, large-size ultrathin nonlayered CdS single-crystalline flakes are successfully achieved via a facile low-temperature chemical sulfurization method, where pre-grown layered CdI2 flakes are employed as the precursor via a simple hot plate assisted vertical vapor deposition method. The size and thickness of CdS flakes can be controlled by the CdI2 precursor. The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI2 and CdS, which has been evidenced by experiments and theoretical calculations. The atomic substitution conversion strategy demonstrates that the existing 2D layered materials can serve as the precursor for difficult-to-synthesize nonlayered 2D materials, providing a bridge between layered and nonlayered materials, meanwhile realizing the fabrication of large-size ultrathin nonlayered 2D materials.


Author(s):  
Dongyang Han ◽  
Ke-Wei Liu ◽  
Jialin Yang ◽  
Xing Chen ◽  
Binghui Li ◽  
...  

Interface engineering is an effective way to improve the performance of heterojunction photodetectors (PDs). We have constructed the p-Si/n-ZnGa2O4 heterojunction solar-blind ultraviolet (UV) PDs with and without SiO2 interfacial layer...


2017 ◽  
Vol 129 (30) ◽  
pp. 8892-8896 ◽  
Author(s):  
Hewei Zhao ◽  
Yujie Zhu ◽  
Fengshi Li ◽  
Rui Hao ◽  
Shaoxiong Wang ◽  
...  

2004 ◽  
Vol 17 (3) ◽  
pp. 354-357 ◽  
Author(s):  
T Manabe ◽  
M Sohma ◽  
I Yamaguchi ◽  
W Kondo ◽  
K Tsukada ◽  
...  

1992 ◽  
Vol 9 ◽  
pp. 713-714
Author(s):  
David Huenemoerder

The availability and advances in two-dimensional electronic detectors, in particular the charge-coupled-devices (CCDs), are a great asset to astronomical imaging and spectroscopy because of their sensitivity, dynamic range, and linearity. In some cases photographic plates still offer an advantage to imaging of large size, but the advent of large format CCDs may make a figure of merit, the area per exposure time, much more favorable for CCDs.


2020 ◽  
Vol 7 (14) ◽  
pp. 2000570
Author(s):  
Hong Jia ◽  
Xue Li ◽  
Yidan Fan ◽  
Chaoliang Ding ◽  
Liuzhan Pan ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (35) ◽  
pp. 16805-16811 ◽  
Author(s):  
Shiwei Cao ◽  
Yanhui Xing ◽  
Jun Han ◽  
Xin Luo ◽  
Wenxing Lv ◽  
...  

The van der Waals (vdW) heterostructure, made up of two dissimilar two-dimensional materials held together by van der Waals interactions, has excellent electronic and optoelectronic properties as it provides a superior interface quality without the lattice mismatch problem.


RSC Advances ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 761-766 ◽  
Author(s):  
Renfu Zhuo ◽  
Shiyong Zuo ◽  
Weiwei Quan ◽  
De Yan ◽  
Baisong Geng ◽  
...  

We report a facile solvothermal method to synthesize hybrid materials SnS/RGO which are promising candidates for potential applications in photodetectors.


2020 ◽  
Vol 8 (3) ◽  
pp. 1089-1094 ◽  
Author(s):  
Xing Chen ◽  
Liyan Wang ◽  
Kewei Liu ◽  
Zhenzhong Zhang ◽  
Binghui Li ◽  
...  

A packaged high performance ZnMgO solar-blind UV photodetector is prepared via a silica gel sealing treatment. The responsivity and stability of the device is improved according to this sealing treatment.


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