Impact of sintering temperature on structural, optical and ferroelectric properties of V-doped ZnO

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

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Electrical Conductivity Measurements of Al-Doped ZnO Semiconductor in High Temperature

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.772.105 ◽

2018 ◽

Vol 772 ◽

pp. 105-109

Author(s):

Syamsul Hadi ◽

Husein Jaya Andika ◽

Agus Kurniawan ◽

Suyitno

Keyword(s):

Electrical Conductivity ◽

Temperature Effects ◽

Sintering Temperature ◽

High Porosity ◽

Conductivity Measurements ◽

Grain Sizes ◽

Lower Porosity ◽

Doped Zno ◽

Zno Semiconductor ◽

Zno Doping

Electrical conductivity plays an important role in the performance of thermoelectric semiconductor material. This study discusses the electrical conductivity measurements of Zinc Oxide (ZnO) doping Aluminium (Al) pellet as a material of thermoelectric using four-point probe method at high temperatures. Al-doped ZnO (2 wt%) pellet was sintered at the temperature of 1100°C, 1200°C, 1300°C, 1400°C, and 1500°C with the heating rate of 8°C/minute. SEM and XRD tests show that the higher sintering temperature effects to larger grain sizes, better crystallinity, and lower porosity. There is no electrical conductivity in the sintering sample at 1100°C due to the small grain sizes and high porosity. In the sintering sample at 1500°C, the phase of ZnAl2O4erupted. The highest electrical conductivity of 5923.48S/m of Al-doped ZnO pellet was obtained at the sintering temperature of 1400°C with measurement temperature of 500°C.

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Effect of Sintering Temperature on Phase Formation, Dielectric, Piezoelectric, and Ferroelectric Properties of Nb-Doped Pb(Zr0.52Ti0.48)O3Ceramics

Ferroelectrics ◽

10.1080/00150190701533785 ◽

2007 ◽

Vol 358 (1) ◽

pp. 35-41

Author(s):

Piyachon Ketsuwan ◽

Athipong Ngamjarurojana ◽

Yongyut Laosiritaworn ◽

Supon Ananta ◽

Rattikorn Yimnirun

Keyword(s):

Phase Formation ◽

Sintering Temperature ◽

Ferroelectric Properties

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Effect of Al-doped ZnO or Sn-doped In2O3electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3capacitors

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.05ed03 ◽

2015 ◽

Vol 54 (5S) ◽

pp. 05ED03 ◽

Cited By ~ 7

Author(s):

Yoko Takada ◽

Toru Tsuji ◽

Naoki Okamoto ◽

Takeyasu Saito ◽

Kazuo Kondo ◽

...

Keyword(s):

Ferroelectric Properties ◽

Doped Zno

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Effect of Sintering Parameter on Ferroelectric Properties in PZT Based Ceramics

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.804.34 ◽

2015 ◽

Vol 804 ◽

pp. 34-37

Author(s):

Tanabat Promjun ◽

Yongyut Manjit ◽

Saksit Sukprasong ◽

Athipong Ngamjarurojana

Keyword(s):

Mixed Oxide ◽

Perovskite Structure ◽

Sintering Temperature ◽

Ferroelectric Properties ◽

Pyrochlore Phase ◽

Soaking Time ◽

Sintering Conditions ◽

Xrd Patterns ◽

Sintering Condition

This research was conducted to improve the ferroelectric properties of PZT based ceramics by studying the effect of sintering conditions in terms of temperature and soaking time (time of sintering) on the ferroelectric properties of ceramics in the 0.8Pb (Zr1/2Ti1/2)O3-0.2Pb (Zn1/3Nb2/3)O3 system prepared by vibro-milling mixed-oxide method. The XRD patterns of specimens showed perovskite structure for all compositions. The pyrochlore phase was not observed in this system. The sintering temperature and soaking time affects the ferroelectric properties of ceramics by the optimum sintering condition for 0.8PZT-0.2PZN ceramic is sintered at 1250°C for 2h.

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SYNTHESIS OF CoFe2O4/Pb(Zr0.53Ti0.47)O3 MULTIFERROIC COMPOSITE THICK FILMS BY LOW-SINTERING-TEMPERATURE SCREEN PRINTING METHOD

Journal of Advanced Dielectrics ◽

10.1142/s2010135x1100015x ◽

2011 ◽

Vol 01 (01) ◽

pp. 119-125 ◽

Cited By ~ 1

Author(s):

W. CHEN ◽

C. X. HUANG ◽

T. S. YAN ◽

W. ZHU ◽

Z. P. LI ◽

...

Keyword(s):

Screen Printing ◽

Sintering Temperature ◽

Ferroelectric Properties ◽

Thick Films ◽

Electron Microscopic ◽

Screen Printing Method ◽

Pzt Films ◽

Multiferroic Composite ◽

Low Sintering Temperature ◽

Printing Method

CoFe 2 O 4/ Pb ( Zr 0.53 Ti 0.47) O 3 (abbreviated as CFO/PZT) multiferroic composite thick films were successfully fabricated on alumina substrate with gold bottom electrode by screen printing method at a low-sintering temperature. The processing included the modification and dispersion of ferromagnetic CFO powder and ferroelectric PZT powder, the preparation of uniform pastes, and the selection of proper annealing temperature for composite thick films. Transmission electron microscopic pictures (TEM) indicated the submicron meter of particles size for both CFO and PZT particles. After annealing at 900°C for 1 h in air, tape test confirmed the quality of multiferroic thick films as well as pure CFO and PZT films. X-ray diffraction (XRD) showed a coexistence of CFO and PZT phases; furthermore, a smooth surface was observed through scanning electron microscopic (SEM) pictures along with the sharp cross-sectional picture, indicative of 100 μm of film thickness. Ferromagnetic and ferroelectric properties were observed in CFO/PZT films simultaneously at room temperature. Compared with the reported CFO/PZT multiferrroic thin films, the present ferromagnetic property was closing to that of the chemical sol-gel synthesized film and even that from the physical pulsed laser deposition technique. However, the ferroelectric property showed a degenerated behavior, possible reasons for this was discussed and further optimization was also proposed for the potential multifunctional application.

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