Electrical Conductivity Measurements of Al-Doped ZnO Semiconductor in High Temperature

2018 ◽  
Vol 772 ◽  
pp. 105-109
Author(s):  
Syamsul Hadi ◽  
Husein Jaya Andika ◽  
Agus Kurniawan ◽  
Suyitno
Keyword(s):  
Electrical Conductivity ◽  
Temperature Effects ◽  
Sintering Temperature ◽  
High Porosity ◽  
Conductivity Measurements ◽  
Grain Sizes ◽  
Lower Porosity ◽  
Doped Zno ◽  
Zno Semiconductor ◽  
Zno Doping

Electrical conductivity plays an important role in the performance of thermoelectric semiconductor material. This study discusses the electrical conductivity measurements of Zinc Oxide (ZnO) doping Aluminium (Al) pellet as a material of thermoelectric using four-point probe method at high temperatures. Al-doped ZnO (2 wt%) pellet was sintered at the temperature of 1100°C, 1200°C, 1300°C, 1400°C, and 1500°C with the heating rate of 8°C/minute. SEM and XRD tests show that the higher sintering temperature effects to larger grain sizes, better crystallinity, and lower porosity. There is no electrical conductivity in the sintering sample at 1100°C due to the small grain sizes and high porosity. In the sintering sample at 1500°C, the phase of ZnAl2O4erupted. The highest electrical conductivity of 5923.48S/m of Al-doped ZnO pellet was obtained at the sintering temperature of 1400°C with measurement temperature of 500°C.

On the Grain Size Distribution of MnO Doped ZnO Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 2361-2362
Author(s):  
Shu Ai Li ◽  
Da Nian Liu ◽  
Jiang Hong Gong
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Sintering Temperature ◽  
Grain Morphology ◽  
Holding Time ◽  
Grain Sizes ◽  
Different Temperatures ◽  
Doped Zno ◽  
Zno Ceramics

A series of MnO-doped ZnO with different grain sizes and grain morphologies were prepared by sintering the samples at different temperatures for different holding times. The grain size distribution for each sample was determined. It was found that, although the grain size increases and the grain morphology varies with the sintering temperature and/or the holding time, the normalized grain size distribution keeps invariable.

Total Body Electrical Conductivity Measurements in the Neonate

1991 ◽  
Vol 18 (3) ◽  
pp. 611-627 ◽  
Author(s):  
Marta L. Fiorotto ◽  
William J. Klish
Keyword(s):  
Electrical Conductivity ◽  
Conductivity Measurements ◽  
Total Body

Comparison of corrosion resistance properties of Ni-P and Ni-W-P coatings obtained by electroless deposition

2020 ◽  
Vol 25 (2) ◽  
pp. 66-71
Author(s):  
A.B. Drovosekov
Keyword(s):  
Corrosion Resistance ◽  
Sulfuric Acid ◽  
Electroless Deposition ◽  
Corrosion Damage ◽  
Electrochemical Activity ◽  
High Porosity ◽  
Environment Analysis ◽  
Damage Degree ◽  
Lower Porosity ◽  
Electroless Coatings

Corrosion resistance properties, such as porosity, stability in the atmosphere of NaCl mist, and anodic electrochemical activity in a sulfuric acid solution are studied and compared for Ni-W-P and Ni-P coatings obtained by electroless deposition. The studied coatings were obtained from solutions with glycine as the main ligand and contained 10.2 to 15.6 at.% of phosphorus and up to 3.3 at.% of tungsten. It is shown that Ni-W-P coatings with a tungsten content of 2.3 to 3.3 at.% and a thickness of 15 μm have a significantly lower porosity as compared with nickel-phosphorus coatings of the same thickness. Also, significantly better stability of Ni-W-P coatings in a NaCl mist atmosphere was observed, their corrosion damage degree is less than that of Ni-P coatings, and relatively little depends on the duration of exposure in a corrosive environment. Analysis of anodic polarization curves showed an almost similar electrochemical activity upon dissolution of Ni-P and Ni-W-P coatings in sulfuric acid. Both these types of electroless coatings showed a markedly better tendency to anodic dissolution than pure nickel. Taking into account the obtained experimental data, a conclusion is made as to the better protective characteristics of Ni-W-P coatings in comparison with nickel-phosphorus coatings. The main reason of the inferior protective properties of Ni-P coatings is their relatively high porosity.

Electrical conductivity studies on silica phases and the effects of phase transformation

2019 ◽  
Vol 104 (12) ◽  
pp. 1800-1805
Author(s):  
George M. Amulele ◽  
Anthony W. Lanati ◽  
Simon M. Clark
Keyword(s):  
Electrical Conductivity ◽  
Activation Volume ◽  
Activation Enthalpy ◽  
Hydrogen Charge ◽  
Charge Compensation ◽  
Composition Analysis ◽  
Conductivity Measurements ◽  
Pressure System ◽  
Electrical Conductivities ◽  
Silica Phases

Abstract Starting with the same sample, the electrical conductivities of quartz and coesite have been measured at pressures of 1, 6, and 8.7 GPa, respectively, over a temperature range of 373–1273 K in a multi-anvil high-pressure system. Results indicate that the electrical conductivity in quartz increases with pressure as well as when the phase change from quartz to coesite occurs, while the activation enthalpy decreases with increasing pressure. Activation enthalpies of 0.89, 0.56, and 0.46 eV, were determined at 1, 6, and 8.7 GPa, respectively, giving an activation volume of –0.052 ± 0.006 cm3/mol. FTIR and composition analysis indicate that the electrical conductivities in silica polymorphs is controlled by substitution of silicon by aluminum with hydrogen charge compensation. Comparing with electrical conductivity measurements in stishovite, reported by Yoshino et al. (2014), our results fall within the aluminum and water content extremes measured in stishovite at 12 GPa. The resulting electrical conductivity model is mapped over the magnetotelluric profile obtained through the tectonically stable Northern Australian Craton. Given their relative abundances, these results imply potentially high electrical conductivities in the crust and mantle from contributions of silica polymorphs. The main results of this paper are as follows:The electrical conductivity of silica polymorphs is determined by impedance spectroscopy up to 8.7 GPa.The activation enthalpy decreases with increasing pressure indicating a negative activation volume across the silica polymorphs.The electrical conductivity results are consistent with measurements observed in stishovite at 12 GPa.

scholarly journals Sensing Performance of Al and Sn Doped ZnO for Hydrogen Detection

Proceedings ◽  
2019 ◽  
Vol 14 (1) ◽  
pp. 39
Author(s):  
Zahira. El khalidi ◽  
Maryam Siadat ◽  
Elisabetta. Comini ◽  
Salah. Fadili ◽  
Philippe. Thevenin
Keyword(s):  
Zinc Oxide ◽  
Chemical Sensor ◽  
Low Cost ◽  
Zinc Powder ◽  
Health Condition ◽  
Vibration Modes ◽  
X Ray Diffraction ◽  
Grain Sizes ◽  
Pure Oxide ◽  
Doped Zno

Chemical gas sensors were studied long ago and nowadays, for the advantageous role they provide to the environment, health condition monitoring and protection. The recent studies focus on the semiconductors sensing abilities, especially of non toxic and low cost compounds. The present work describes the steps to elaborate and perform a chemical sensor using intrinsic and doped semiconductor zinc oxide. First, we synthesized pure oxide using zinc powder, then, two other samples were established where we introduced the same doping percentage of Al and Sn respectively. Using low cost spray pyrolysis, and respecting the same conditions of preparation. The obtained samples were then characterized by X Ray Diffraction (XRD) that revealed the hexagonal wurzite structure and higher crystallite density towards the direction (002), besides the appearance of the vibration modes related to zinc oxide, confirmed by Raman spectroscopy. SEM spectroscopy showed that the surface morphology is ideal for oxidizing/reduction reactions, due to the porous structure and the low grain sizes, especially observed for the sample Sn doped ZnO. The gas testing confirms these predictions showing that the highest response is related to Sn doped ZnO compared to ZnO and followed by Al doped ZnO. The films exhibited responses towards: CO, acetone, methanol, H2, ammonia and NO2. The concentrations were varied from 10 to 500 ppm and the working temperatures from 250 to 500°C, the optimal working temperatures were 350 and 400 °C. Sn doped ZnO showed a high response towards H2 gas target, with a sensitivity reaching 200 at 500 ppm, for 400 °C.

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