scholarly journals DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors

1998 ◽  
Vol 21 (2) ◽  
pp. 79-85
Author(s):  
H. C. Chen
Keyword(s):  
High Frequency ◽  
Cutoff Frequency ◽  
Differential Resistance ◽  
Negative Resistance ◽  
Real Space ◽  
Current Gain ◽  
Hot Electron ◽  
S Parameter ◽  
First Time ◽  
Real Space Transfer

DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs channel. By Hall measurements, the structure shows carrier mobility as high as 4300 (13500) cm2/v-s at 300 (77)K, which is suitable for high frequency operation. For DC performance, the largest peak-to-valley current ratio of the device is about 5 at room temperature. For AC performance, S-parameter measurements of high frequency and microwave characteristics indicate a projected maximum frequency of oscillation offmax⁡=2.7GHzand a current gain cutoff frequency (fT) occurs at 1.8GHz.

Measurements of hot‐electron conduction and real‐space transfer in GaAs‐AlxGa1−xAs heterojunction layers

1981 ◽  
Vol 38 (1) ◽  
pp. 36-38 ◽  
Author(s):  
M. Keever ◽  
H. Shichijo ◽  
K. Hess ◽  
S. Banerjee ◽  
L. Witkowski ◽  
...  
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Electron Conduction ◽  
Real Space Transfer

Simulation of an AlGaN/GaN HEMT for Ka-Band

2013 ◽  
Vol 748 ◽  
pp. 864-867
Author(s):  
Xiao Bin Luo ◽  
Wei Hua Yu ◽  
De Chun Guo ◽  
Zhi Ming Wang
Keyword(s):  
High Frequency ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Current Gain ◽  
Drain Voltage ◽  
Zero Bias ◽  
Ka Band ◽  
Material Parameters ◽  
Gan Hemt ◽  
Lateral Structure

A physical model of 0.24μm gate-length and 50μm gate-width AlGaN/GaN HEMTs is designed in the paper including lateral structure and longitudinal material parameters. Then DC and high frequency characteristics are both simulated and analyzed. The results show that the saturation drain current is 0.8A/mm at zero bias and the maximum transconductance is 350mS/mm. The current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 35GHz and 107GHz respectively at -2V gate voltage and 25V drain voltage. The maximum available power gains (MAG) is 10.2dB at 40GHz. Therefore, the structure can be applied to Ka-band.

Real-space transfer by hot electron resonant tunneling

1993 ◽  
Vol 13 (4) ◽  
pp. 397
Author(s):  
T.K. Higman ◽  
Jihong Chen ◽  
M.S. Hagedorn ◽  
F. Williamson
Keyword(s):  
Resonant Tunneling ◽  
Real Space ◽  
Hot Electron ◽  
Real Space Transfer

scholarly journals A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures

2017 ◽  
Vol 1 (4) ◽  
pp. 045002 ◽  
Author(s):  
V V Vainberg ◽  
O G Sarbey ◽  
A S Pylypchuk ◽  
V N Poroshin ◽  
N V Baidus
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Dual Channel ◽  
Real Space Transfer

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

2015 ◽  
Vol 30 (3) ◽  
pp. 035003 ◽  
Author(s):  
E Šermukšnis ◽  
J Liberis ◽  
A Matulionis ◽  
V Avrutin ◽  
R Ferreyra ◽  
...  
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Real Space Transfer

Quench of hot-electron real space transfer by electronic screening

1991 ◽  
Vol 38 (11) ◽  
pp. 2417-2422 ◽  
Author(s):  
C.-T. Liu ◽  
S. Luryi ◽  
P.A. Garbinski ◽  
A.Y. Cho ◽  
D.L. Sivco
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Electronic Screening ◽  
Real Space Transfer
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