scholarly journals Towards Automating Structural Discovery in Scanning Transmission Electron Microscopy

Author(s):  
Nicole Creange ◽  
Ondrej Dyck ◽  
Rama K Vasudevan ◽  
Maxim Ziatdinov ◽  
Sergei V Kalinin

Abstract Scanning transmission electron microscopy (STEM) is now the primary tool for exploring functional materials on the atomic level. Often, features of interest are highly localized in specific regions in the material, such as ferroelectric domain walls, extended defects, or second phase inclusions. Selecting regions to image for structural and chemical discovery via atomically resolved imaging has traditionally proceeded via human operators making semi-informed judgements on sampling locations and parameters. Recent efforts at automation for structural and physical discovery have pointed towards the use of ‘active learning’ methods that utilize Bayesian optimization with surrogate models to quickly find relevant regions of interest. Yet despite the potential importance of this direction, there is a general lack of certainty in selecting relevant control algorithms and how to balance a priori knowledge of the material system with knowledge derived during experimentation. Here we address this gap by developing the automated experiment workflows with several combinations to both illustrate the effects of these choices and demonstrate the tradeoffs associated with each in terms of accuracy, robustness, and susceptibility to hyperparameters for structural discovery. We discuss possible methods to build descriptors using the raw image data and deep learning based semantic segmentation, as well as the implementation of variational autoencoder based representation. Furthermore, each workflow is applied to a range of feature sizes including NiO pillars within a La:SrMnO3 matrix, ferroelectric domains in BiFeO3, and topological defects in graphene. The code developed in this manuscript are open sourced and will be released at github.com/creangnc/AE_Workflows.

Author(s):  
F. Khoury ◽  
L. H. Bolz

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.


2000 ◽  
Vol 638 ◽  
Author(s):  
Alan D.F. Dunbar ◽  
Matthew P. Halsall ◽  
Uschi Bangert ◽  
Alan Harvey ◽  
Philip Dawson ◽  
...  

AbstractWe report optical and scanning transmission electron microscopy studies of germanium dots grown on silicon. In an attempt to control the self-organized growth process and promote dot size uniformity the dot layers were grown on a 4.5nm Si0.6Ge0.4 alloy template layer. Photoluminescence results indicate the formation of carrier confining Ge rich islands, whilst Raman scattering results indicate the presence of an alloy throughout the structures formed. The samples were studied in the UK high resolution scanning transmission electron microscopy facility at Liverpool, UK. Energy dispersive analysis of individual line scans through the sample show that the structures are composed of an alloy throughout with an asymmetric distribution of Germanium in the dots and in the wetting layer close to the dots. We discuss the results in the light of the proposed growth mode for these dots and conclude that attempts to manipulate the composition of these dots during growth may be problematic due to the self-organized nature of their formation.


2010 ◽  
Vol 16 (S2) ◽  
pp. 1116-1117
Author(s):  
PJ Kempen ◽  
AS Thakor ◽  
CL Zavaleta ◽  
SS Gambhir ◽  
R Sinclair

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2010 ◽  
Vol 16 (S2) ◽  
pp. 80-81 ◽  
Author(s):  
SD Findlay ◽  
N Shibata ◽  
H Sawada ◽  
E Okunishi ◽  
Y Kondo ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


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