The explosion of silver azide in an electric field

Recently McLaren & Rogers (1957) reported that silver azide could be made to explode if placed between two electrodes and an electric field of ca . 250 V/cm applied. In an attempt to determine the nature of the process of the initiation of explosion, a preliminary study of the conductivity of single crystals of silver azide has been made. The current has been measured as a function of time for a constant field, and as a function of field strength at temperatures from 50 °C down to -100 °C. Measurements have also been made of the time to explosion as a function of the frequency of the applied field. The results suggest that the breakdown is due to field emission from the cathode, and that electrons may enter the crystal with sufficient energy to produce decomposition, followed by self-heating and explosion.

A theoretical analysis is given of the motion of solid non-conducting charged spheres through symmetrical electrolytes, under the action of an applied electric field. It is shown that the steady velocity of translation U may be written in the alternative forms U = Ʃ ∞ 1 c v Q v = Ʃ ∞ 1 d v ζ v , where Qe denotes the charge on a sphere and ζ the zeta-potential; the coefficients c v and d v are proportional to the applied field strength and depend upon the radius of the particle and the concentrations, valencies and mobilities of the ions in the electrolyte. A general method is given for calculating the c v and d v and the first four coefficients of each series found explicitly. Some quite general properties of the c v are also deduced. It is shown that under certain conditions, the terms of the series for U , apart from the first, are of considerable importance and must be taken into account in estimating ζ from U .


1976 ◽  
Vol 31 (3-4) ◽  
pp. 251-258
Author(s):  
W.-W. Falter

Hole currents are observed by illuminating 2,3 DN single crystals with 347 nm and 337 nm. The probability of generating free holes is a function of temperature and electric field-strength. In the cleavage plane of the crystals the mobility does not depend on the direction of the applied field and amounts to 2.6·10-1 cm2/Vsec at room temperature, which exceeds the related value measured perpendicularly to the plane by a factor of four. The temperature-dependence of the mobility indicates shallow hole-trapping exspecially close to the surface. The trap depth is estimated to be 10-2 eV. Temperature also influences the pulse shape, by which one can conclude that hole traps of 0.2 eV and ≲ 0.1 eV exist in a thin surface layer. Photocurrents exited with 347 nm increase stronger than quadratically with the electric field. Deep hole traps, being also restricted to the surface region of the crystals, are made responsible for this fact.


1962 ◽  
Vol 40 (9) ◽  
pp. 1056-1066 ◽  
Author(s):  
Robert Barrie ◽  
R. R. Burgess

The drift velocity of electrons in n-type germanium has been measured as a function of applied electric field at lattice temperatures of 77° K and 295° K. Three directions of applied field were used, viz. (100), (110), and (111) crystal directions. The range of field strength was from 500 v/cm to 75 kv/cm. A longitudinal anisotropy was observed at 77° K but not at 295° K. All specimens showed saturation of the drift velocity at high fields. At 77° K, all (100) specimens exhibited a breakdown effect, the cause of which is not known. The results are analyzed on the basis of an extension of Stratton's theory to the case of a many-valley semiconductor.


2007 ◽  
Vol 54 (4) ◽  
pp. 236-240
Author(s):  
Shoichi Nasu ◽  
Shinji Nagata ◽  
Sorin Kihara ◽  
Katsumi Takahiro ◽  
Tatsuo Shikama

2015 ◽  
Vol 752-753 ◽  
pp. 163-167 ◽  
Author(s):  
Alexander M. Svetlichnyi ◽  
Oleg. A. Ageev ◽  
Evgeny Yu. Volkov ◽  
Igor L. Jityaev ◽  
Maxim V. Dem'yanenko

Graphene film on silicon carbide is considered to be promising material for high-frequency vacuum nanoelectronics. However, the possibility of graphene application in this area is still poorly understood. We have carried out the simulation of the electric field distribution in interelectrode gap of the anode-cathode system pointed field emission cathode based on silicon carbide with graphene film on its surface subject to the rounding-off radius of the top, interelectrode gap, height and cathode forming half-angle of the cone opening by the finite element method. The influence of constructional parameters on the electric field strength in the test structure was analyzed. It is shown that the values of rounding-off radius of the cone point and interelectrode distance has the biggest influence on the electric field in the investigated structure. Changing of the height and cathode forming half-angle of the cone opening does not lead to a significant increase or decrease of the electric field value.


2016 ◽  
Vol 136 (10) ◽  
pp. 1420-1421
Author(s):  
Yusuke Tanaka ◽  
Yuji Nagaoka ◽  
Hyeon-Gu Jeon ◽  
Masaharu Fujii ◽  
Haruo Ihori

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