Review lecture - Quantum processes in semiconductor structures

1988 ◽  
Vol 420 (1858) ◽  
pp. 1-19 ◽  
Keyword(s):  
Electron Scattering ◽  
Low Temperatures ◽  
Quantum Interference ◽  
Short Review ◽  
Two Dimensions ◽  
Quantum Processes ◽  
Semiconductor Structures ◽  
Scattering Rate ◽  
Effect Of Disorder ◽  
Effective Dimensionality

A short review is given on quantum interference and interaction effects in semiconductor structures. It is shown that these effects give rise to observable corrections in the conductivity at low temperatures and can be separated by the behaviour of the magnetoresistance. Results are presented on the dimensionality dependence of the interference and it is shown that when a magnetic field determines the magnitude of the effect, this can be used to change the effective dimensionality of the system. The use of magnetoresistance in the extraction of electron–electron scattering rates is discussed and it is shown that in two dimensions the effect of disorder on the elec­tron–electron scattering rate can be observed.

Electron scattering by acceptor centers in p-Ag2Te at low temperatures

2010 ◽  
Vol 44 (8) ◽  
pp. 1008-1011 ◽  
Author(s):  
F. F. Aliev ◽  
M. B. Jafarov ◽  
G. Z. Askerova ◽  
E. M. Gojaev
Keyword(s):  
Electron Scattering ◽  
Low Temperatures

QUANTUM PERCOLATION

1995 ◽  
Vol 09 (23) ◽  
pp. 2989-3024 ◽  
Author(s):  
ABHIJIT MOOKERJEE ◽  
INDRA DASGUPTA ◽  
TANUSRI SAHA
Keyword(s):  
Low Temperatures ◽  
Two Dimensions ◽  
Percolation Model ◽  
Quantum Percolation ◽  
Resonant States

In this review we describe and analyze various numerical attempts at understanding transport in the Quantum Percolation Model. We conclude that in two-dimensions all states are localized, though not necessarily exponentially localized, and that transport at low temperatures is dominated by probabilistically exceptional necklace-like resonant states.

NANOSILICON FOR PHOTONIC APPLICATIONS

2007 ◽  
Vol 21 (22) ◽  
pp. 3783-3796 ◽  
Author(s):  
S. K. GHOSHAL ◽  
DEVENDRA MOHAN ◽  
TADESSE TENAW KASSA ◽  
SUNITA SHARMA
Keyword(s):  
Gas Sensing ◽  
Intrinsic Property ◽  
Photo Luminescence ◽  
Short Review ◽  
Two Dimensions ◽  
Basic Question ◽  
Nano Technology ◽  
Light Amplification ◽  
Photon Confinement ◽  
Low Dimensional

This presentation is a short review of some scientific insights on the possibilities of photonic applications of nanostructured silicon ( NS – Si ), porous Si ( p - Si ) and Si nanocrystals ( NC – Si ), one of the most interesting problems in nano-crystallite physics. The emission mechanism of a very bright photo-luminescence (PL) band and relatively weak electro-luminescence (EL) are presently the main issue. The basic question lies in whether the emission is an extrinsic or intrinsic property of nanocrystals. It is important from a fundamental physics viewpoint because of the potential application of Si wires and quantum dots in optoelectronic devices and information technology. Nanostructuring silicon is an effective way to turn silicon into a photonic material. It is observed that low-dimensional (one and two dimensions) silicon shows light amplification, photon confinement, photon trapping as well as non-linear optical effects. There is strong evidence of light localization and gas sensing properties of such nanostructures. Future nano-technology would replace electrical with optical interconnects, which has appealing potential for higher-speed performance and immunity to signal cross talk.

Electron-phonon effects in copper. I. Electron scattering rate and mass enhancement

1982 ◽  
Vol 26 (4) ◽  
pp. 1538-1548 ◽  
Author(s):  
F. S. Khan ◽  
P. B. Allen ◽  
W. H. Butler ◽  
F. J. Pinski
Keyword(s):  
Electron Scattering ◽  
Scattering Rate ◽  
Mass Enhancement

Model of Electron Scattering of Strained Si /Si1-xGex (100)

2011 ◽  
Vol 110-116 ◽  
pp. 3338-3342
Author(s):  
Jian Jun Song ◽  
Hua Ying Wu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Heng Sheng Shan
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Golden Rule ◽  
Collision Term ◽  
Strained Si ◽  
Total Electron ◽  
Total Scattering ◽  
Scattering Rate ◽  
Term Approximation

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

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