NANOSILICON FOR PHOTONIC APPLICATIONS
This presentation is a short review of some scientific insights on the possibilities of photonic applications of nanostructured silicon ( NS – Si ), porous Si ( p - Si ) and Si nanocrystals ( NC – Si ), one of the most interesting problems in nano-crystallite physics. The emission mechanism of a very bright photo-luminescence (PL) band and relatively weak electro-luminescence (EL) are presently the main issue. The basic question lies in whether the emission is an extrinsic or intrinsic property of nanocrystals. It is important from a fundamental physics viewpoint because of the potential application of Si wires and quantum dots in optoelectronic devices and information technology. Nanostructuring silicon is an effective way to turn silicon into a photonic material. It is observed that low-dimensional (one and two dimensions) silicon shows light amplification, photon confinement, photon trapping as well as non-linear optical effects. There is strong evidence of light localization and gas sensing properties of such nanostructures. Future nano-technology would replace electrical with optical interconnects, which has appealing potential for higher-speed performance and immunity to signal cross talk.