scholarly journals High Resolution Investigations with the Scanning and Transmission Electron Microscope of Haemadsorption Binding Sites of Mumps Virus-infected HeLa Cells

1975 ◽  
Vol 28 (1) ◽  
pp. 99-109 ◽  
Author(s):  
K. Mannweiler ◽  
G. Rutter
Author(s):  
H. Tochigi ◽  
H. Uchida ◽  
S. Shirai ◽  
K. Akashi ◽  
D. J. Evins ◽  
...  

A New High Excitation Objective Lens (Second-Zone Objective Lens) was discussed at Twenty-Sixth Annual EMSA Meeting. A new commercially available Transmission Electron Microscope incorporating this new lens has been completed.Major advantages of the new instrument allow an extremely small beam to be produced on the specimen plane which minimizes specimen beam damages, reduces contamination and drift.


1997 ◽  
Vol 3 (3) ◽  
pp. 203-213 ◽  
Author(s):  
J.A. DeRose ◽  
J.-P. Revel

Abstract: We have developed a method for the examination of atomic force microscopy (scanning force microscopy) tips using a high-resolution transmission electron microscope (TEM). The tips can be imaged in a nondestructive way, enabling one to observe the shape of an atomic force microscope probe in the vicinity of the apex with high resolution. We have obtained images of atomic force microscopy probes with a resolution on the order of 1 nm. The tips can be imaged repeatedly, so one can examine tips before and after use. We have found that the tip can become blunted with use, the rate of wear depending upon the sample and tip materials and the scanning conditions. We have also found that the tips easily accrue contamination. We have studied both commercially produced tips, as well as tips grown by electron beam deposition. Direct imaging in the TEM should prove useful for image deconvolution methods because one does not have to make any assumptions concerning the general shape of the tip profile.


2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.


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