Carrier-Concentration Dependence of Electron-Phonon Scattering in Te-Doped GaSb at Low Temperature

1969 ◽  
Vol 182 (3) ◽  
pp. 802-807 ◽  
Author(s):  
A. M. Poujade ◽  
H. J. Albany
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Concentration Dependence ◽  
Phonon Scattering ◽  
Electron Phonon Scattering

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

The effect of nickel doping on electron and phonon transport in the n-type nanostructured thermoelectric material CoSbS

2015 ◽  
Vol 3 (40) ◽  
pp. 10442-10450 ◽  
Author(s):  
Zihang Liu ◽  
Huiyuan Geng ◽  
Jing Shuai ◽  
Zhengyun Wang ◽  
Jun Mao ◽  
...  
Keyword(s):  
Effective Mass ◽  
Carrier Concentration ◽  
Thermoelectric Material ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Strong Electron ◽  
Nickel Doping ◽  
Electron Phonon Scattering

The optimized carrier concentration, high effective mass and strong electron–phonon scattering for Ni doped CoSbS contribute to the enhanced ZT value.

scholarly journals Electron-Phonon Scattering in Si-Doped GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
C. Wetzel ◽  
W. Walukiewicz ◽  
J. W. Ager
Keyword(s):  
Carrier Concentration ◽  
Phonon Scattering ◽  
Variable Temperature ◽  
Small Cross Section ◽  
Free Electron Concentration ◽  
Transient Time ◽  
Detection Scheme ◽  
Si Doped ◽  
Resonant Raman ◽  
Electron Phonon Scattering

ABSTRACTPhonon-plasmon scattering in non-resonant Raman spectroscopy is used to determine the free electron concentration in Si doped GaN films. For various doping concentration and variable temperature the correlation with magneto-transport data is established. The freeze-out of the carrier concentration at low temperature is thus observed in a purely optical detection scheme. We observe a very long transient time of several hours for the carrier concentration as a reaction to temperature variation. This indicates an indirect capture and emission process with a very small cross section. The value of the Faust-Henry coefficient is determined.

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