scholarly journals Electronic structure of semiconductor nanostructures: A modified localization landscape theory

2020 ◽  
Vol 101 (3) ◽  
Author(s):  
D. Chaudhuri ◽  
J. C. Kelleher ◽  
M. R. O'Brien ◽  
E P. O'Reilly ◽  
S. Schulz
Keyword(s):  
Electronic Structure ◽  
Semiconductor Nanostructures ◽  
Landscape Theory

scholarly journals Модификация атомной и электронной структуры поверхности полупроводников А-=SUP=-III-=/SUP=-В-=SUP=-V-=/SUP=- на границе с растворами электролитов О б з ор

2020 ◽  
Vol 54 (7) ◽  
pp. 587
Author(s):  
М.В. Лебедев
Keyword(s):  
Electronic Structure ◽  
Electrolyte Solutions ◽  
Semiconductor Nanostructures ◽  
Semiconductor Surface ◽  
Device Performance ◽  
Transfer Processes ◽  
The Relationship ◽  
Theoretical Results ◽  
Atomic And Electronic Structure ◽  
Modification Of The Surface

Recent experimental and theoretical results on modification of the surface atomic and electronic structure of various III–V semiconductor with electrolyte solutions are reviewed. The relationship between the chemical and charge transfer processes that proceed at the semiconductor/electrolyte interfaces and accompanying modification of the semiconductor surface atomic and electronic structure is revealed. Advances in the application of electrolyte solutions for modification of the semiconductor nanostructures and device performance are discussed.

scholarly journals Origins of improved carrier multiplication efficiency in elongated semiconductor nanostructures

2015 ◽  
Vol 17 (4) ◽  
pp. 2573-2581 ◽  
Author(s):  
Andrew Sills ◽  
Marco Califano
Keyword(s):  
Electronic Structure ◽  
Semiconductor Nanostructures ◽  
Carrier Multiplication

Our calculations show that the origins of improved carrier multiplication efficiency in elongated semiconductor nanostructures can be attributed purely to electronic structure effects.

scholarly journals NanoPSE: Nanoscience Problem Solving Environment for atomistic electronic structure of semiconductor nanostructures

2005 ◽  
Vol 16 ◽  
pp. 277-282 ◽  
Author(s):  
Wesley B Jones ◽  
Gabriel Bester ◽  
Andrew Canning ◽  
Alberto Franceschetti ◽  
Peter A Graf ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Problem Solving ◽  
Semiconductor Nanostructures ◽  
Problem Solving Environment

scholarly journals Influence of strain on band structure of semiconductor nanostructures

2009 ◽  
Vol 6 (3) ◽  
pp. 461-469
Author(s):  
Nevena Raicevic ◽  
Milan Tadic
Keyword(s):  
Electronic Structure ◽  
Quantum Well ◽  
Mechanical Strain ◽  
Semiconductor Nanostructures ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Triangular Shape ◽  
Orbital Part ◽  
Strain Dependent

The influence of the mechanical strain on the electronic structure of the asymmetric (In,Ga)As/GaAs quantum well is considered. Both the direct influence of strain on the orbital part of the electronic structure and an indirect influence through the strain dependent Rashba and Dresselhaus Hamiltonians are taken into account. The analyzed quantum well is taken to have a triangular shape, and is oriented along the <110> direction. For this direction, there exists both the intrinsic and strain-induced spin-orbit interaction. For all analyzed types of spin-orbit interaction, subband splittings depend linearly on the in-plane wave vector. On the other hand, the electronic structure for the Rashba type of the strain-induced spin-orbit interaction shows isotropic dependence in the k-space, while the electronic structure due to the Dresselhaus type shows anisotropy. Furthermore, the Rashba strain-induced spin-orbit interaction increases subband splitting, while the effect of the Dresselhaus Hamiltonian on the electronic structure is opposite to the intrinsic spin-orbit interaction for certain polar angles.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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