Laser-induced crystallization of amorphous GeTe: A time-resolved study

1987 ◽  
Vol 36 (3) ◽  
pp. 1595-1604 ◽  
Author(s):  
E. Huber ◽  
E. E. Marinero
1993 ◽  
Vol 321 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

AbstractIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


RSC Advances ◽  
2016 ◽  
Vol 6 (98) ◽  
pp. 95601-95610 ◽  
Author(s):  
Yuko Ikeda ◽  
Preeyanuch Junkong ◽  
Takumi Ohashi ◽  
Treethip Phakkeeree ◽  
Yuta Sakaki ◽  
...  

Guayule and rubber dandelion natural rubbers are useful alternatives forHeveanatural rubber in terms of their strain-induced crystallization behaviours.


Soft Matter ◽  
2011 ◽  
Vol 7 (4) ◽  
pp. 1512-1523 ◽  
Author(s):  
Moshe Nadler ◽  
Ariel Steiner ◽  
Tom Dvir ◽  
Or Szekely ◽  
Pablo Szekely ◽  
...  

1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

ABSTRACTIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


2015 ◽  
Vol 44 (4) ◽  
pp. 434-436 ◽  
Author(s):  
Koji Maruyama ◽  
Hiroyuki Kagi ◽  
Toru Inoue ◽  
Hiroaki Ohfuji ◽  
Toru Yoshino

2003 ◽  
Vol 803 ◽  
Author(s):  
Qin F. Wang ◽  
Lu P. Shi ◽  
Su M. Huang ◽  
Xiang S. Miao ◽  
Kai P. Wong ◽  
...  

ABSTRACTTime resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge1Sb2Te4 films. With an average fluence of 24mJ/cm2 a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.


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