Dynamical changeover of core exciton state of graphite and resonant x-ray emission spectrum: From shallow to deep level with symmetry breaking

AbstractHigh-quality (ZnS)n(ZnSe)12n and (ZnSe)n(ZnTe)11n (n=1∼4) crystals were grown at a low temperature of 200°C by hydrogen radical-enhanced chemical vapor deposition. From satellite peaks in x-ray diffraction spectra, these periodic structure crystals were confirmed to be grown coherently on substrates, in spite of large lattice mismatches between the grown layers and the substrates (͛=4∼7%). In photoluminescence (PL) spectra of these films, strong band-edge emissions were predominantly observed, resulting from a suppression of deep-level emissions. We found that the PL peak energy of (ZnSe)n(ZnTe)11n shifts systematically to lower energy by 200 meV with changes in the number of ZnSe layers (n), while relatively small shift of 13 meV was observed in (ZnS)n(ZnSe)12n. These discrepancy can be attributed to the difference of band-lineups or chemical natures of constituent atoms in these crystals.

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Time Evolution of Optical Emission Spectrum of a Hg-HID Lamp Exposed to X-ray

Plasma Chemistry and Plasma Processing ◽

10.1007/s11090-010-9228-5 ◽

2010 ◽

Vol 30 (4) ◽

pp. 449-459 ◽

Cited By ~ 3

Author(s):

N. A. Harabor ◽

A. Harabor ◽

I. Palarie ◽

I. M. Popescu ◽

G. Zissis

Keyword(s):

Emission Spectrum ◽

Time Evolution ◽

Optical Emission ◽

Optical Emission Spectrum ◽

X Ray

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ChemInform Abstract: INTERPRETATION OF THE SOFT X-RAY EMISSION SPECTRUM AND THE VALENCE PHOTOELECTRON SPECTRUM OF CHROMIUM MONONITRIDE USING A NEIGHBORING SOLIDS MODEL

Chemischer Informationsdienst ◽

10.1002/chin.197731005 ◽

1977 ◽

Vol 8 (31) ◽

pp. no-no

Author(s):

P. WEINBERGER

Keyword(s):

Emission Spectrum ◽

Photoelectron Spectrum ◽

Abstract Interpretation ◽

X Ray

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Fabrication of GaN Doped ZnO Nanocrystallines by Laser Ablation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.an19 ◽

2008 ◽

Vol 8 (8) ◽

pp. 4168-4171

Author(s):

N. Gopalakrishnan ◽

B. C. Shin ◽

K. P. Bhuvana ◽

J. Elanchezhiyan ◽

T. Balasubramanian

Keyword(s):

Deep Level ◽

Morphological Properties ◽

X Ray Diffraction ◽

Ceramic Method ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Doped Zno ◽

Krf Excimer Laser ◽

Photoluminescence Studies

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nmand it is 41 nmwhile doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

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K? band in the x-ray emission spectrum of nitrogen in AIIIBV-type nitrides and some of their properties

Theoretical and Experimental Chemistry ◽

10.1007/bf00529157 ◽

1974 ◽

Vol 8 (3) ◽

pp. 281-286

Author(s):

N. N. Vasilenko ◽

M. D. Lyutaya ◽

E. A. Zhurakovskii ◽

N. Frantsevich

Keyword(s):

Emission Spectrum ◽

X Ray ◽

K Band

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