Significance of third-order elasticity for determination of the pressure coefficient of the light emission in strained quantum wells

2008 ◽  
Vol 78 (15) ◽  
Author(s):  
S. P. Łepkowski
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Pressure Coefficient ◽  
Third Order ◽  
Strained Quantum Wells

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Light emission from several-atom In–N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells

2011 ◽  
Vol 59 (7) ◽  
pp. 2773-2782 ◽  
Author(s):  
Jun-jie Shi ◽  
Shuai Zhang ◽  
Mao Yang ◽  
Shang-guo Zhu ◽  
Min Zhang
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Ingan Alloys

Large Built-in Electric Field and Its Influence on the Pressure Behavior of the Light Emission from GaN/AlGaN Strained Quantum Wells

2001 ◽  
Vol 188 (2) ◽  
pp. 839-843 ◽  
Author(s):  
P. Perlin ◽  
T. Suski ◽  
S.P. ?epkowski ◽  
H. Teisseyre ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior

Influence of second-order piezoelectricity on the pressure coefficient of the light emission in (111)-oriented InGaAs∕GaAs quantum wells

2010 ◽  
Author(s):  
S. P. Łepkowski ◽  
Marília Caldas ◽  
Nelson Studart
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Pressure Coefficient ◽  
Second Order

Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures

2000 ◽  
Vol 639 ◽  
Author(s):  
P. Perlin ◽  
T. Suski ◽  
P. Wisniewski ◽  
I. Gorczyca ◽  
S. Lepkowski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Pressure Coefficient ◽  
Applied Pressure ◽  
First Principle ◽  
Pressure Coefficients ◽  
Emission And Absorption Spectra ◽  
Absorption Measurements ◽  
Ingan Alloys ◽  
Good Agreement

ABSTRACTWe have studied an influence of pressure on the emission and absorption spectra measured from various types of InGaN structures such as epilayers, quantum wells and quantum dots. While the known pressure coefficients of GaN and InN bandgaps are in the range 40-25 meV/GPa, the experimental observation for the light emission shift with pressure for InGaN alloys is dramatically different. With the increasing In content and thus decreasing emission energy the observed pressure coefficients become very small eventually reaching zero or even slightly negative values! We have observed a much weaker trend for the decrease of the pressure coefficient for the absorption edges of InGaN. First principle calculations of InGaN band structure and its modification with a pressure are not able to explain the huge effect observed in the emission experiment but are in a good agreement with the results obtained in optical absorption measurements. We discuss here the possible mechanisms which can account for extremely low pressure coefficient of the light emission and the discrepancy between sensitivity light emission and absorption on applied pressure in InGaN alloys.

Pressure dependence of elastic constants in wurtzite and zinc-blende nitrides and their influence on the optical pressure coefficients in nitride heterostructures

2004 ◽  
Vol 831 ◽  
Author(s):  
Sławomir P. Łepkowski ◽  
Jacek A. Majewski
Keyword(s):  
Quantum Wells ◽  
Elastic Constants ◽  
Pressure Dependence ◽  
Density Functional ◽  
Light Emission ◽  
Pressure Coefficient ◽  
Wurtzite Phase ◽  
Zinc Blende ◽  
The Density Functional Theory ◽  
Optical Pressure

ABSTRACTWe have studied the nonlinear elasticity effects in III-N compounds. Particularly, we have determined the pressure dependences of elastic constants in wurtzite and zinc-blende InN, GaN, and AlN by performing ab-initio calculations in the framework of plane-wave pseudopotential implementation of the density-functional theory. We have found that C11, C12 in zinc-blende phase and C11, C12, C13, C33 in wurtzite phase depend significantly and almost linearly on hydrostatic pressure, for all considered nitrides. Much weaker dependences on pressure have been observed for C44 in both wurtzite and zinc-blende phases. Further, we have examined the influence of pressure dependence of elastic constant on the pressure coefficient of light emission, dEE / dP, in wurtzite and cubic, InGaN/GaN and GaN/AlGaN quantum wells. We show that the pressure dependence of elastic constants results in significant reduction of dEE / dP in nitride quantum wells and essentially improves the agreement between experimental and theoretical values.

Determination Of The Third Order Nonlinearity As A Function Of Quantum Well Width In Gaas/A1Gaas Multiple Quantum Wells

1988 ◽  
Author(s):  
M W. Derstine ◽  
D E. Grider ◽  
J A. Lehman ◽  
P P. Ruden ◽  
Nasser Peyghambarian
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Third Order ◽  
The Third ◽  
Quantum Well Width ◽  
Third Order Nonlinearity
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