Magnetic moment formation in metal-organic monolayers

2015 ◽  
Vol 92 (18) ◽  
Author(s):  
Manel Mabrouk ◽  
Roland Hayn
2021 ◽  
Author(s):  
Nadia O. Laschuk ◽  
Rana Ahmad ◽  
Iraklii I. Ebralidze ◽  
Jade Poisson ◽  
Franco Gaspari ◽  
...  

Sequential covalent embedding of cobalt, osmium, and iron complexes of 4'-(pyridin-4-yl)-2,2':6',2''-terpyridine to surface-enhanced support pre-functionalized with a templating layer results in hetero-bimetallic (Os-Fe and Co-Fe) and hetero-trimetallic (Co-Os-Fe) monolayer materials....


2020 ◽  
Vol 63 (15-18) ◽  
pp. 1585-1595
Author(s):  
F. Armillotta ◽  
A. Pividori ◽  
M. Stredansky ◽  
N. Seriani ◽  
E. Vesselli

AbstractBy means of a combined experimental and computational approach, we show that a 2D metal–organic framework self-assembled at the Au(111) termination is able to mimic the O2 stabilization and activation mechanisms that are typical of the biochemical environment of proteins and enzymes. 5,10,15,20-tetra(4-pyridyl)21H,23H-porphyrin cobalt(III) chloride (CoTPyP) molecules on Au(111) bind dioxygen forming a covalent bond at the Co center, yielding charge injection into the ligand by exploiting the surface trans-effect. A weakening of the O–O bond occurs, together with the development of a dipole moment, and a change in the molecule’s magnetic moment. Also the bonding geometry is similar to the biological counterpart, with the O2 molecule sitting on-top of the Co atom and the molecular axis tilted by 118°. The ligand configuration lays between the oxo- and the superoxo-species, in agreement with the observed O–O stretching frequency measured in situ at near-ambient pressure conditions.


Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).


Author(s):  
J.L. Batstone

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).


2021 ◽  
Author(s):  
Lars Öhrström ◽  
Francoise M. Amombo Noa

2020 ◽  
Vol 7 (1) ◽  
pp. 221-231
Author(s):  
Seong Won Hong ◽  
Ju Won Paik ◽  
Dongju Seo ◽  
Jae-Min Oh ◽  
Young Kyu Jeong ◽  
...  

We successfully demonstrate that the chemical bath deposition (CBD) method is a versatile method for synthesizing phase-pure and uniform MOFs by controlling their nucleation stages and pore structures.


2021 ◽  
Author(s):  
Jintong Liu ◽  
Jing Huang ◽  
Lei Zhang ◽  
Jianping Lei

We review the general principle of the design and functional modulation of nanoscaled MOF heterostructures, and biomedical applications in enhanced therapy.


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