Effect of channel temperature and mass window in the fission decay of Re*181

2020 ◽  
Vol 101 (1) ◽  
Author(s):  
C. Kokila ◽  
M. Balasubramaniam
Keyword(s):  
Mass Window ◽  
Channel Temperature

Infrared Emission Spectroscopy as a Reliability Tool

1999 ◽  
Author(s):  
Q. Kim ◽  
S. Kayali
Keyword(s):  
Spatial Resolution ◽  
Emission Spectroscopy ◽  
Hot Spot ◽  
Cost Effective ◽  
Infrared Emission ◽  
Test System ◽  
Operating Conditions ◽  
Yield Enhancement ◽  
Infrared Emission Spectroscopy ◽  
Channel Temperature

Abstract In this paper, we report on a non-destructive technique, based on IR emission spectroscopy, for measuring the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). A submicron-size He-Ne laser provides the local excitation of the gate channel and the emitted photons are collected by a spectrophotometer. Given the state of our experimental test system, we estimate a spectral resolution of approximately 0.1 Angstroms and a spatial resolution of approximately 0.9 μm, which is up to 100 times finer spatial resolution than can be obtained using the best available passive IR systems. The temperature resolution (<0.02 K/μm in our case) is dependent upon the spectrometer used and can be further improved. This novel technique can be used to estimate device lifetimes for critical applications and measure the channel temperature of devices under actual operating conditions. Another potential use is cost-effective prescreening for determining the 'hot spot' channel temperature of devices under normal operating conditions, which can further improve device design, yield enhancement, and reliable operation. Results are shown for both a powered and unpowered MESFET, demonstrating the strength of our infrared emission spectroscopy technique as a reliability tool.

Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

2021 ◽  
pp. 111595
Author(s):  
Abu Zahed Chowdhury ◽  
Mohammad Abdul Alim ◽  
Shariful Islam ◽  
Christophe Gaquiere
Keyword(s):  
Thermal Sensitivity ◽  
Gan Hemt ◽  
Channel Temperature

scholarly journals Accidental SO(10) axion from gauged flavour

2020 ◽  
Vol 2020 (11) ◽  
Author(s):  
Luca Di Luzio
Keyword(s):  
Mass Window ◽  
High Quality ◽  
High Scale ◽  
Quality Problem ◽  
Axion Mass ◽  
Grand Unified Theories ◽  
Unified Theories ◽  
Canonical Dimension ◽  
General Perspective ◽  
Effective Operators

Abstract An accidental U(1) Peccei-Quinn (PQ) symmetry automatically arises in a class of SO(10) unified theories upon gauging the SU(3)f flavour group. The PQ symmetry is protected by the ℤ4 × ℤ3 center of SO(10) × SU(3)f up to effective operators of canonical dimension six. However, high-scale contributions to the axion potential posing a PQ quality problem arise only at d = 9. In the pre-inflationary PQ breaking scenario the axion mass window is predicted to be ma ∈ [7 × 10−8, 10−3] eV, where the lower end is bounded by the seesaw scale and the upper end by iso-curvature fluctuations. A high-quality axion, that is immune to the PQ quality problem, is obtained for ma ≳ 2 0.02 eV. We finally offer a general perspective on the PQ quality problem in grand unified theories.

A multi-channel temperature controller for diffusion furnace

1980 ◽  
Vol 6 (5) ◽  
pp. 325-329
Author(s):  
W. Lobodzinski ◽  
M. Orzylowski ◽  
Z. Rudolf
Keyword(s):  
Temperature Controller ◽  
Channel Temperature

The development characteristics of the discontinuous leader under the positive switching impulse with low rate of voltage rising

2018 ◽  
Vol 83 (2) ◽  
pp. 20802 ◽  
Author(s):  
Yaoheng Xie ◽  
Yue Yishi ◽  
Huisheng Ye ◽  
Liu Yun ◽  
Yongheng Zhong ◽  
...  
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Unit Length ◽  
Leader Development ◽  
Air Gap ◽  
Discharge Process ◽  
Temperature Changes ◽  
Channel Temperature ◽  
Impulse Voltage ◽  
Low Rate

Discontinuous leader development is the most important discharge process under the application of the switching impulse voltage with the low rate of voltage rising, which is of great significance to study the external insulation characteristics of ultra-high voltage (UHV) large scale air gap. Based on the CMOS high-speed camera, a discharge test with different operating impulse voltage is carried out by constructing a comprehensive observation platform of rod-plate air gap discharge, and a clear discontinuous leader development process picture is captured. Moreover, the leader current, injection charge and leader channel unit length charge, and their characteristics of the change trend are also obtained. Further analysis based on the experimental results shows that the discontinuous leader development under the action of the impulse voltage with low rate of voltage rising has two different laws. Finally, this paper uses the thermodynamic equation, combined with the test results, the channel temperature changes in the discontinuous leader development stagnation stage were calculated. The results show that the leader channel temperature is still greater than 1500 K in the hundreds of microsecond time scales in the leader stagnation stage, and the subsequent leader can continue to develop on the original leader channel.

scholarly journals The neutrino mass window for baryogenesis

2003 ◽  
Vol 665 ◽  
pp. 445-468 ◽  
Author(s):  
W. Buchmüller ◽  
P. Di Bari ◽  
M. Plümacher
Keyword(s):  
Neutrino Mass ◽  
Mass Window
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