Erratum: Measurement of the Casimir Force between a Gold Sphere and a Silicon Surface with Nanoscale Trench Arrays [Phys. Rev. Lett.101, 030401 (2008)]

Some experimental procedures and corresponding results of the precision measurement of the Casimir force between low doped Indium Tin Oxide ( ITO ) film and gold sphere are described. Measurements were performed using an Atomic Force Microscope in high vacuum. It is shown that the magnitude of the Casimir force decreases after prolonged UV treatment of the ITO film. Some critical data analysis steps such as the correction for the mechanical drift of the sphere-plate system and photodiodes are discussed.

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DEMONSTRATING THE STRONG GEOMETRY DEPENDENCE OF THE CASIMIR FORCE ON A SURFACE WITH DEEP, NANOSCALE CORRUGATIONS

International Journal of Modern Physics A ◽

10.1142/s0217751x10049487 ◽

2010 ◽

Vol 25 (11) ◽

pp. 2212-2222 ◽

Cited By ~ 4

Author(s):

H. B. CHAN ◽

Y. BAO ◽

J. ZOU ◽

R. A. CIRELLI ◽

F. KLEMENS ◽

...

Keyword(s):

Casimir Force ◽

Flat Surface ◽

Torsional Oscillator ◽

Silicon Surfaces ◽

Finite Conductivity ◽

Additive Approximation ◽

Corrugated Surfaces ◽

Geometry Dependence ◽

Proximity Force Approximation ◽

Gold Sphere

We measure the Casimir force gradient between silicon surfaces with nanoscale, rectangular corrugations and a gold sphere attached to a micromechanical torsional oscillator. By comparing the force gradients on the corrugated surfaces to that on a smooth, flat surface of the same material, we demonstrate that the Casimir force deviates from the value expected from the pairwise additive approximation and the proximity force approximation. The observed deviation qualitatively agrees with calculations that take into account the interplay between finite conductivity and geometry effects. However, the agreement is not exact, possibly due to uncertainties in the optical properties of the silicon substrate.

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Measurement of the gradient of the Casimir force between a nonmagnetic gold sphere and a magnetic nickel plate

Physical Review B ◽

10.1103/physrevb.85.195422 ◽

2012 ◽

Vol 85 (19) ◽

Cited By ~ 69

Author(s):

A. A. Banishev ◽

C.-C. Chang ◽

G. L. Klimchitskaya ◽

V. M. Mostepanenko ◽

U. Mohideen

Keyword(s):

Casimir Force ◽

Nickel Plate ◽

Gold Sphere

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CRITICAL STEPS IN DATA ANALYSIS FOR PRECISION CASIMIR FORCE MEASUREMENTS WITH SEMICONDUCTING FILMS

International Journal of Modern Physics Conference Series ◽

10.1142/s2010194511001012 ◽

2011 ◽

Vol 03 ◽

pp. 497-506 ◽

Cited By ~ 2

Author(s):

A. A. BANISHEV ◽

CHIA-CHENG CHANG ◽

U. MOHIDEEN

Keyword(s):

Data Analysis ◽

Indium Tin Oxide ◽

Casimir Force ◽

High Vacuum ◽

Force Measurements ◽

Uv Treatment ◽

Critical Data ◽

Ito Film ◽

Atomic Force ◽

Gold Sphere

Some experimental procedures and corresponding results of the precision measurement of the Casimir force between low doped Indium Tin Oxide (ITO) film and gold sphere are described. Measurements were performed using an Atomic Force Microscope in high vacuum. It is shown that the magnitude of the Casimir force decreases after prolonged UV treatment of the ITO film. Some critical data analysis steps such as the correction for the mechanical drift of the sphere-plate system and photodiodes are discussed.

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Modulation of the Casimir force by laser pulses: Influence of oxide films on the silicon surface

Physics of the Solid State ◽

10.1134/s1063783410100057 ◽

2010 ◽

Vol 52 (10) ◽

pp. 2033-2038 ◽

Cited By ~ 1

Author(s):

G. L. Klimchitskaya ◽

M. N. Bukina ◽

Yu. V. Churkin ◽

V. A. Yurova

Keyword(s):

Silicon Surface ◽

Casimir Force ◽

Oxide Films ◽

Laser Pulses

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UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130353 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1144-1145

Author(s):

T. Sato ◽

S. Kitamura ◽

T. Sueyoshl ◽

M. Iwatukl ◽

C. Nielsen

Keyword(s):

High Temperature ◽

Relaxation Process ◽

Thermal Effect ◽

Bias Voltage ◽

Silicon Surface ◽

Growth Process ◽

Tunneling Current ◽

Fabrication Technique ◽

Nano Fabrication ◽

Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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Profile Imaging of Silicon Surface Reconstructions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118229 ◽

1985 ◽

Vol 43 ◽

pp. 262-263

Author(s):

O.L. Krivanek ◽

G.J. Wood

Keyword(s):

Electron Microscopy ◽

Surface Structure ◽

Structure Determination ◽

Silicon Surface ◽

Good Resolution ◽

Surface Reconstructions ◽

Bulk Structure ◽

Point To Point ◽

The Relationship

Electron microscopy at 0.2nm point-to-point resolution, 10-10 torr specimei region vacuum and facilities for in-situ specimen cleaning presents intere; ing possibilities for surface structure determination. Three methods for examining the surfaces are available: reflection (REM), transmission (TEM) and profile imaging. Profile imaging is particularly useful because it giv good resolution perpendicular as well as parallel to the surface, and can therefore be used to determine the relationship between the surface and the bulk structure.

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