Measurement of Temporal Coherence of Free Electrons by Time-Domain Electron Interferometry

A ridged-circular nanoaperture is investigated through three-dimensional (finite-difference time-domain) FDTD method. The motion equations of free electrons are inserted to analyze a metallic material. The electromagnetic field distributions of optical near-field around the aperture are investigated. The phase change disk illuminated by a near-field optical light through a ridged-circular nanoaperture is also analyzed. The far-field scattering patterns from the phase change disk and the crosstalk characteristics between plural marks are studied.

Download Full-text

Dynamic studies of silicide-mediated crystallization of amorphous silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131395 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1352-1353

Author(s):

C. Hayzelden ◽

J. L. Batstone

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Metallic Phase ◽

Single Crystal Substrate ◽

Free Electrons ◽

Melt Temperature ◽

Transmission Electron ◽

Crystal Substrate ◽

High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Download Full-text

Principle and practice of high-resolution imaging with a field-emission TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121090 ◽

1992 ◽

Vol 50 (1) ◽

pp. 138-139

Author(s):

Max T. Otten ◽

Wim M.J. Coene

Keyword(s):

High Resolution ◽

Field Emission ◽

Incidence Angle ◽

Temporal Coherence ◽

Energy Spread ◽

High Resolution Imaging ◽

Major Improvement ◽

High Resolution Images ◽

Resolution Imaging

High-resolution imaging with a LaB6 instrument is limited by the spatial and temporal coherence, with little contrast remaining beyond the point resolution. A Field Emission Gun (FEG) reduces the incidence angle by a factor 5 to 10 and the energy spread by 2 to 3. Since the incidence angle is the dominant limitation for LaB6 the FEG provides a major improvement in contrast transfer, reducing the information limit to roughly one half of the point resolution. The strong improvement, predicted from high-resolution theory, can be seen readily in diffractograms (Fig. 1) and high-resolution images (Fig. 2). Even if the information in the image is limited deliberately to the point resolution by using an objective aperture, the improved contrast transfer close to the point resolution (Fig. 1) is already worthwhile.

Download Full-text