Two-Dimensional Indirect Exciton in Layer-Type Semiconductor GaSe

To explore the variation on p-type-doped two-dimensional GaN, we calculate electronic and optical properties of buckled two-dimensional GaN-doped with p-type doping elements including Be, Mg and Zn atom by using first-principles. The results indicate that doping process of two-dimensional GaN after Be is most easily compared with Mg- and Zn-doped models. Band of doped two-dimensional GaN moves toward high energy end and it becomes a p-type semiconductor from the results of band structure and density of states, which may be caused by orbitals hybridization from dopants. Band gap and work function of doped two-dimensional GaN are both declined, which is beneficial for escape of electrons. Analysis of optical properties shows that they are sensitive and adjustable in doped two-dimensional GaN. Doping of Be, Mg and Zn atoms would have an important effect on optical characteristics of two-dimensional GaN at low-energy region.

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Branching of electron current and quantum effects in two-dimensional dislocation barrier of n-type semiconductor

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)03005-7 ◽

2000 ◽

Vol 284-288 ◽

pp. 1908-1909 ◽

Cited By ~ 1

Author(s):

Evgenii Z. Meilikhov ◽

Rimma M. Farzetdinova

Keyword(s):

Quantum Effects ◽

Two Dimensional ◽

Electron Current ◽

Type Semiconductor ◽

Dislocation Barrier

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Evidence of two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn

Nature Communications ◽

10.1038/s41467-021-25705-1 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Minyong Han ◽

Hisashi Inoue ◽

Shiang Fang ◽

Caolan John ◽

Linda Ye ◽

...

Keyword(s):

Electronic Structure ◽

Finite Energy ◽

Flat Band ◽

Tunneling Conductance ◽

Two Dimensional ◽

Structure Transition ◽

Spintronic Devices ◽

Lattice Geometry ◽

Planar Tunneling ◽

Type Semiconductor

AbstractThe kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO3, we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices.

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