scholarly journals Variation of Surface Reaction Probability with Reactant Angle of Incidence: A Molecular Beam Study of the Asymmetry of Stepped Platinum Crystal Surfaces for H-H Bond Breaking

1977 ◽  
Vol 38 (18) ◽  
pp. 1027-1029 ◽  
Author(s):  
R. J. Gale ◽  
M. Salmeron ◽  
G. A. Somorjai
Keyword(s):  
Molecular Beam ◽  
Surface Reaction ◽  
Reaction Probability ◽  
Bond Breaking ◽  
Angle Of Incidence ◽  
Crystal Surfaces ◽  
The Asymmetry

Carbonization Dynamics of Silicon Surfaces By Hydrocarbon Gas Molecular Beams

1991 ◽  
Vol 220 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Substrate Temperature ◽  
Molecular Beam ◽  
Surface Reaction ◽  
Narrow Range ◽  
Gradual Increase ◽  
Molecular Beams ◽  
Silicon Surfaces ◽  
Surface Oxide Layer ◽  
Single Crystalline ◽  
Hydrocarbon Gas

ABSTRACTCarbonization dynamics of Si surfaces using a hydrocarbon gas molecular beam was investigated. In case of carbonizing atomically clean Si surfaces with C2H2, single crystalline 3C-SiC layers were obtained only In the narrow range of a substrate temperature near 780 °C. Control of surface reaction by a cap of very thin surface oxide layer and gradual increase of substrate temperature during carbonization were found to be effective in forming single crystalline 3C-SiC layers reproducibly.

Molecular beam measurements and Monte Carlo simulations of the kinetics of N2O decomposition on Rh(111) single-crystal surfaces

2006 ◽  
Vol 125 (7) ◽  
pp. 074705 ◽  
Author(s):  
Rodolfo Omar Uñac ◽  
Victor Bustos ◽  
Jarod Wilson ◽  
Giorgio Zgrablich ◽  
Francisco Zaera
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Single Crystal ◽  
Molecular Beam ◽  
N2o Decomposition ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Kinetics Of

Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

2000 ◽  
Vol 609 ◽  
Author(s):  
W.M.M. Kessels ◽  
A.H.M. Smets ◽  
J.P.M. Hoefnagels ◽  
M.G.H. Boogaarts ◽  
D.C. Schram ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Surface Reaction ◽  
Film Growth ◽  
Plasma Deposition ◽  
Reaction Probability ◽  
Film Properties ◽  
Deposition Rates ◽  
Minor Contribution ◽  
A Minor

ABSTRACTFrom investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

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