Optical Pump-Probe Measurements of Local Nuclear Spin Coherence in Semiconductor Quantum Wells

2006 ◽  
Vol 96 (6) ◽  
Author(s):  
H. Sanada ◽  
Y. Kondo ◽  
S. Matsuzaka ◽  
K. Morita ◽  
C. Y. Hu ◽  
...  
2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.


2002 ◽  
Vol 14 (8) ◽  
pp. 1214-1216 ◽  
Author(s):  
G.A. Keeler ◽  
D. Agarwal ◽  
C. Debaes ◽  
B.E. Nelson ◽  
N.C. Helman ◽  
...  

1999 ◽  
Vol 572 ◽  
Author(s):  
T. J. Schmidt ◽  
J. J. Song ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  

ABSTRACTWe report the results of nondegenerate optical pump-probe absorption experiments performed on GaN and InGaN thin films and quantum wells under the conditions of strong optical band to band excitation. The evolution of the band edge in these materials was monitored as the number of photoexcited free carriers was increased beyond that required to achieve population inversion and observe stimulated emission. The band edge of InGaN is shown to exhibit markedly different high excitation behavior than that of GaN, explaining in part the reduction in stimulated emission threshold that typically accompanies the incorporation of indium into GaN to form InGaN. A comparison of the band edge absorption changes observed in pump-probe experiments to the gain spectra measured in variable-stripe gain experiments is also given.


2014 ◽  
Vol 251 (9) ◽  
pp. 1872-1880 ◽  
Author(s):  
E. A. Zhukov ◽  
D. R. Yakovlev ◽  
A. Schwan ◽  
O. A. Yugov ◽  
A. Waag ◽  
...  

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