Determination of mean inner potential of germanium using off-axis electron holography

1999 ◽  
Vol 55 (4) ◽  
pp. 652-658 ◽  
Author(s):  
Jing Li ◽  
M. R. McCartney ◽  
R. E. Dunin-Borkowski ◽  
David J. Smith
Keyword(s):  
Experimental Error ◽  
Theoretical Calculations ◽  
Dark Field ◽  
Convergent Beam Electron Diffraction ◽  
Electron Holography ◽  
Weak Beam ◽  
The Mean ◽  
Diffraction Patterns ◽  
Convergent Beam

Off-axis electron holography has been used to determine the mean inner potential of germanium using cleaved 90° wedge samples, where the wedge thickness profiles were checked by weak-beam dark-field extinction fringes. Dynamical contributions to the phase of the image were minimized by tilting to weakly diffracting conditions, as confirmed by reference to convergent-beam electron diffraction patterns. Small residual corrections were determined using multislice calculations. From a total of 18 separate measurements, it is concluded that the value of the mean inner potential is 14.3 (2) V, which agrees with recent theoretical calculations to within experimental error.

Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction

2007 ◽  
Vol 13 (5) ◽  
pp. 329-335 ◽  
Author(s):  
Suk Chung ◽  
David J. Smith ◽  
Martha R. McCartney
Keyword(s):  
Electron Diffraction ◽  
Theoretical Calculations ◽  
Mean Free Path ◽  
High Energy ◽  
Convergent Beam Electron Diffraction ◽  
Electron Holography ◽  
Beam Electron ◽  
The Mean ◽  
Convergent Beam ◽  
Inelastic Mean Free Path

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

Determinability of Complete Residual Strain Tensor from Multiple CBED Patterns

2006 ◽  
Vol 524-525 ◽  
pp. 115-120 ◽  
Author(s):  
Adam Morawiec
Keyword(s):  
Strain Tensor ◽  
Convergent Beam Electron Diffraction ◽  
Reasonable Accuracy ◽  
Multiple Diffraction ◽  
Numerical Tests ◽  
Diffraction Patterns ◽  
Convergent Beam ◽  
The Impact ◽  
Elastic Strain Tensor

The ambiguity in determination of complete elastic strain tensor by convergent beam electron diffraction can be overcome by simultaneous use of multiple diffraction patterns. Numerical tests of strain determining procedure based on multiple patterns have been carried out. Patterns were simulated using both kinematic and dynamic approaches, and then they were used as input in the tested procedure. The tests indicate that, in practice, at least three patterns are needed in order to determine a complete strain tensor with reasonable accuracy. The strain resolution of two parts per ten thousand was achieved with five diffraction patterns. Moreover, the impact of errors in voltage and camera length is considered. It is shown that within the kinematic description, the deviations from the correct voltage are equivalent to errors in the isotropic part of strain.

Two Investigations into Grain Boundary Structure

1977 ◽  
Vol 35 ◽  
pp. 688-691
Author(s):  
P. Humble
Keyword(s):  
Grain Boundary ◽  
Dark Field ◽  
Boundary Structure ◽  
Boundary Dislocation ◽  
Bright Field ◽  
Intrinsic Structure ◽  
Weak Beam ◽  
Grain Boundary Structure ◽  
Independent Information ◽  
Diffraction Patterns

There has been sustained interest over the last few years into both the intrinsic (primary and secondary) structure of grain boundaries and the extrinsic structure e.g. the interaction of matrix dislocations with the boundary. Most of the investigations carried out by electron microscopy have involved only the use of information contained in the transmitted image (bright field, dark field, weak beam etc.). Whilst these imaging modes are appropriate to the cases of relatively coarse intrinsic or extrinsic grain boundary dislocation structures, it is apparent that in principle (and indeed in practice, e.g. (1)-(3)) the diffraction patterns from the boundary can give extra independent information about the fine scale periodic intrinsic structure of the boundary.In this paper I shall describe one investigation into each type of structure using the appropriate method of obtaining the necessary information which has been carried out recently at Tribophysics.

Inelastic Electron Scattering from Valence Electrons in Aluminum

1976 ◽  
Vol 34 ◽  
pp. 462-463
Author(s):  
P. E. Batson ◽  
C. H. Chen ◽  
J. Silcox
Keyword(s):  
Electron Scattering ◽  
Single Scattering ◽  
Three Dimensions ◽  
Inelastic Electron ◽  
Weak Beam ◽  
Scattering Spectrum ◽  
Valence Electrons ◽  
Diffraction Patterns ◽  
Electronic Scattering

We wish to report in this paper measurements of the inelastic scattering component due to the collective excitations (plasmons) and single particlehole excitations of the valence electrons in Al. Such scattering contributes to the diffuse electronic scattering seen in electron diffraction patterns and has recently been considered of significance in weak-beam images (see Gai and Howie) . A major problem in the determination of such scattering is the proper correction for multiple scattering. We outline here a procedure which we believe suitably deals with such problems and report the observed single scattering spectrum.In principle, one can use the procedure of Misell and Jones—suitably generalized to three dimensions (qx, qy and #x2206;E)--to derive single scattering profiles. However, such a computation becomes prohibitively large if applied in a brute force fashion since the quasi-elastic scattering (and associated multiple electronic scattering) extends to much larger angles than the multiple electronic scattering on its own.

A library of convergent-beam electron diffraction patterns

1986 ◽  
Vol 44 ◽  
pp. 688-691
Author(s):  
John F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Materials Science ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Yield Information ◽  
Analytical Electron ◽  
Diffraction Patterns ◽  
Convergent Beam ◽  
Electron Energy Loss

One of the most important advancements of the transmission electron microscopy (TEM) in recent years has been the development of the analytical electron microscope (AEM). The microanalytical capabilities of AEMs are based on the three major techniques that have been refined in the last decade or so, namely, Convergent Beam Electron Diffraction (CBED), X-ray Energy Dispersive Spectroscopy (XEDS) and Electron Energy Loss Spectroscopy (EELS). Each of these techniques can yield information on the specimen under study that is not obtainable by any other means. However, it is when they are used in concert that they are most powerful. The application of CBED in materials science is not restricted to microanalysis. However, this is the area where it is most frequently employed. It is used specifically to the identification of the lattice-type, point and space group of phases present within a sample. The addition of chemical/elemental information from XEDS or EELS spectra to the diffraction data usually allows unique identification of a phase.

Identification by Electron Microdiffraction of Intermetallic Phases in a Duplex Stainless Steel

1990 ◽  
Vol 48 (2) ◽  
pp. 494-495
Author(s):  
A. Redjaïmia ◽  
J.P. Morniroli ◽  
G. Metauer ◽  
M. Gantois
Keyword(s):  
Stainless Steel ◽  
Duplex Stainless Steel ◽  
Convergent Beam Electron Diffraction ◽  
Intermetallic Phases ◽  
Small Particles ◽  
Parallel Beam ◽  
Diffraction Patterns ◽  
Average Size ◽  
Convergent Beam ◽  
Electron Microdiffraction

2D and especially 3D symmetry information required to determine the crystal structure of four intermetallic phases present as small particles (average size in the range 100-500nm) in a Fe.22Cr.5Ni.3Mo.0.03C duplex stainless steel is not present in most Convergent Beam Electron Diffraction (CBED) patterns. Nevertheless it is possible to deduce many crystal features and to identify unambiguously these four phases by means of microdiffraction patterns obtained with a nearly parallel beam focused on a very small area (50-100nm).From examinations of the whole pattern reduced (RS) and full (FS) symmetries the 7 crystal systems and the 11 Laue classes are distinguished without ambiguity (1). By considering the shifts and the periodicity differences between the ZOLZ and FOLZ reflection nets on specific Zone Axis Patterns (ZAP) which depend on the crystal system, the centering type of the cell and the glide planes are simultaneously identified (2). This identification is easily done by comparisons with the corresponding simulated diffraction patterns.

A New Detector System For The HB5 Stem Instrument

1985 ◽  
Vol 43 ◽  
pp. 134-135
Author(s):  
J.M. Cowley
Keyword(s):  
Dark Field ◽  
Detector System ◽  
Electron Holography ◽  
Small Specimen ◽  
Bright Field ◽  
Multiple Images ◽  
Practical Applications ◽  
Wide Range ◽  
Diffraction Patterns ◽  
Operational Modes

The HB5 STEM instrument at ASU has been modified previously to include an efficient two-dimensional detector incorporating an optical analyser device and also a digital system for the recording of multiple images. The detector system was built to explore a wide range of possibilities including in-line electron holography, the observation and recording of diffraction patterns from very small specimen regions (having diameters as small as 3Å) and the formation of both bright field and dark field images by detection of various portions of the diffraction pattern. Experience in the use of this system has shown that sane of its capabilities are unique and valuable. For other purposes it appears that, while the principles of the operational modes may be verified, the practical applications are limited by the details of the initial design.

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